Advanced alignment optical system for DUV scanner

Nagayama, Tadashi; Yasuda, Masahiko; Kanaya, Yuho; Masada, Takahiro; Sugaya, Ayako

doi:10.1117/12.535083

Cited by 5 publications

(3 citation statements)

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“…8, which is assumed to be a mark after laser ablation, and to use a conventional Nikon FIA alignment sensor with 0.3 NA optics. 8 Figure 9 shows an actual mark design, which is 0.3 m wide and has a 12 m pitch. Figure 10 shows a real signal from the laser ablated marks.…”

Section: Application To M1 (Metal Cmp) Processmentioning

confidence: 99%

Alignment mark signal simulation system for the optimum mark feature selection

Satō

Endo

Higashiki

et al. 2005

J. Micro/Nanolith. MEMS MOEMS

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Recently, requirements concerning overlay accuracy have become much more restrictive. For the accurate overlay, signal intensity and wave form from the topographical alignment mark have been examined by signal simulation. However, even if the results were in good agreement with actual signal profiles, it would be difficult to select particular alignment marks at each mask level by the signal simulation. Therefore, many mark candidates are left in the kerf area after mass production. To facilitate the selection, we propose a mark TCAD system. It is a useful system for the mark selection with the signal simulation performed in advance. In our system, the alignment mark signal can be easily simulated after input of some process material parameters and process of record (POR). The POR is read into the system and a process simulator makes stacked films on a wafer. Topographical marks are simulated from the stacked films and the resist pattern. The topographical marks are illuminated and reflected beams are produced. Imaging of the reflected beams through inspection optics is simulated. In addition, we show two applications. This system is not only for predicting and showing a signal wave form, but is also helpful for finding the optimum marks.

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Section: Application To M1 (Metal Cmp) Processmentioning

confidence: 99%

Alignment mark signal simulation system for the optimum mark feature selection

Satō

Endo

Higashiki

et al. 2005

J. Micro/Nanolith. MEMS MOEMS

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“…In this paper, W nas is about several m in root-mean-square expression. 8) Equation (A•7) may be approximated as…”

Section: Markmentioning

confidence: 99%

Tool-Induced Shift and Pupil Transmittance Distribution in Measurement Optics

Sugaya

Nagayama

Masada

2005

Jpn. J. Appl. Phys.

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We present a derivation of the scattering amplitude prescription for the pure spinor superstring from first principles, both in the minimal and non-minimal formulations, and show that they are equivalent. This is achieved by first coupling the worldsheet action to topological gravity and then proceeding to BRST quantize this system. Our analysis includes the introduction of constant ghosts and associated auxiliary fields needed to gauge fix symmetries associated with zero modes. All fields introduced in the process of quantization can be integrated out explicitly, resulting in the prescriptions for computing scattering amplitudes that have appeared previously in the literature. The zero mode insertions in the path integral follow from the integration over the constant auxiliary fields.

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“…The need to maintain high alignment accuracy requires that illumination is large. 7) FFO has been developed as a technique to realize wafer alignment with both high accuracy and better image contrast. In FFO, focus (Z) gives the phase difference W n between the 0th and nth rays using the following equation, keeping illumination large.…”

Section: Best Image Contrastmentioning

confidence: 99%

Alignment Focus Optimization and Image Contrast

Sugaya¹

2005

Jpn. J. Appl. Phys.

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In LSI mass production, an alignment sensor must be installed in an exposure system to detect the pattern position accurately even if the pattern condition is changed. To satisfy such a requirement, the defocus effect of improving the image contrast is studied. Particularly under optical conditions with large illumination σ, the theory of image profile change induced by defocus is clarified in this paper. For a field image alignment sensor (FIA) with large illumination σ, FIA focus optimization (FFO) is developed as a technique that realizes alignment with both high accuracy and better image contrast by optimized defocus. FFO makes this possible regardless of the pattern phase and/or pattern duty ratio. The effects are confirmed by simulations and experiments. The versatile advantages of FFO for LSI production are confirmed.

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Advanced alignment optical system for DUV scanner

Cited by 5 publications

References 0 publications

Alignment mark signal simulation system for the optimum mark feature selection

Alignment mark signal simulation system for the optimum mark feature selection

Tool-Induced Shift and Pupil Transmittance Distribution in Measurement Optics

Alignment Focus Optimization and Image Contrast

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