2009
DOI: 10.1016/j.nimb.2009.03.035
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Advanced applications in microphotonics using proton beam writing

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Cited by 20 publications
(5 citation statements)
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“…It involves scanning of a focused proton beam typically with MeV energy, and micron or even sub-micron size within the target material [Fig 31(a)] to induce local structural modifications at micron/submicron scales at the end of range of the penetrating protons. This leads to localized alteration of bond polarizability or material density at the nuclear collision volume, and in turn to a refractive index change [338]. An advantageous feature that differentiates this method from conventional ion/proton implantation is that waveguide formation can be accomplished in a single step without masking the substrate.…”
Section: Proton Beam Writingmentioning
confidence: 99%
“…It involves scanning of a focused proton beam typically with MeV energy, and micron or even sub-micron size within the target material [Fig 31(a)] to induce local structural modifications at micron/submicron scales at the end of range of the penetrating protons. This leads to localized alteration of bond polarizability or material density at the nuclear collision volume, and in turn to a refractive index change [338]. An advantageous feature that differentiates this method from conventional ion/proton implantation is that waveguide formation can be accomplished in a single step without masking the substrate.…”
Section: Proton Beam Writingmentioning
confidence: 99%
“…Second, the temperature of the target can be controlled at low, room, or high temperatures, thus the diffusion of implanted ions and the radiation damage can be tailored. Lastly, the interaction region can be well-defined by combining lithography (the technique of ion beam lithography by means of particle beam writing has been developed using the light ion microbeam system; ion beam lithography has been a major application for MeV energy ion microbeams to fabricate micro-/nanostructures with a high aspect ratio) and mask technology.…”
Section: Ion Beam Technologymentioning
confidence: 99%
“…Ion implanters operate in the energy range from tens of eV to several MeV according to their applications. Usually, ion implanters having low energy in 1 to 200 keV ranges are utilized for treating the surface of solids or doping in semiconductors. Also, a low-energy ion implanter can be used for welding nanostructures like nanowires (NWs), nanotubes, or integrating NWs in nanodevices, which are now special applications of an ion implanter in the area of nanotechnology. However, medium-energy ions in the range of ∼300 keV to 50 MeV are used for producing a proton beam apart from the synthesis and modification of thin films. High-energy protons and rapid heavy ions with energies of ∼50 MeV to hundreds of MeV are utilized for surface modification and physical properties of thin films. In addition to incorporation of impurities, the foremost feature of ion implantation is the creation of point defects due to collisions by the energetic ion. Minute concentrations of defects and impurities in semiconductors can hugely alter the mechanical, electrical, optical, and magnetic properties of the materials. Therefore, for an application of ion implantation, a knowledge of the fundamental physics and chemistry behind the interaction of the ion beam and the target is required.…”
Section: Introductionmentioning
confidence: 99%