Advanced Approaches to Functional Glasses

Inoue, Satoru

doi:10.2109/jcersj.111.716

Cited by 3 publications

(3 citation statements)

References 20 publications

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“…However, as an amorphous oxide formed via thin film deposition and its glass analogue quenched from melts can be distinct, further confirmation of the current proposal for diverse glass forming oxide liquids and amorphous oxide thin film is necessary. Properties of non-crystalline oxides depends on detailed thermal history and thus synthesis conditions (e.g., melt-quenching, sol-gel synthesis, and vapor deposition) 31 32 33 34 . Therefore, it is expected that their structures (glass vs. deposited amorphous oxides) are different in a various length scale (from atomic to textural evolution).…”

Section: Resultsmentioning

confidence: 99%

Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film

Lee

Ahn

2014

Sci Rep

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Whereas the atomic structure of surface of crystals is known to be distinct from that of bulk, experimental evidence for thickness-induced structural transitions in amorphous oxides is lacking. We report the NMR result for amorphous alumina with varying thickness from bulk up to 5 nm, revealing the nature of structural transitions near amorphous oxide surfaces/interfaces. The coordination environments in the confined amorphous alumina thin film are distinct from those of bulk, highlighted by a decrease in the fractions of high-energy clusters (and thus the degree of disorder) with thickness. The result implies that a wide range of variations in amorphous structures may be identified by controlling its dimensionality.

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Section: Resultsmentioning

confidence: 99%

Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film

Lee

Ahn

2014

Sci Rep

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“…Among the various nanomaterials applied for electrochemical detection, nanostructured semiconductor materials have re-ceived increasing interest due to their novel electrical properties and long-term chemical stability [21], such as CdS [22] and Fe 3 O 4 nanomaterials [23]. Al 4 SiC 4 nanomaterials, a kind of semiconductors are proposed as a detection strategy toward heavy metal ions due to its outstanding power electronics properties, electrical conductivities, electrical resistivity and physicochemical properties [24,25]. However, due to the complicate synthesis methods [26], the application of Al 4 SiC 4 as electrode for the detection of heavy metal ions have rarely been reported.…”

Section: Introductionmentioning

confidence: 99%

Selective Determination of Copper (II) Based on Aluminum Silicon Carbide Nanoparticles Modified Glassy Carbon Electrode by Square Wave Stripping Voltammetry

Bai

Yang

et al. 2017

Electroanalysis

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The morphology and structure of as‐prepared aluminum silicon carbide (Al4SiC4) were characterized using X‐ray diffraction (XRD) patterns, scanning electron microscope (SEM), transmission electron microscopy (TEM) and UV‐vis spectra. The Al4SiC4 nanoparticles modified glassy carbon electrode (GCE) was further investigated by cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). Based on this, this kind of new electrode was used for the detection of trace Cu2+ by square wave anodic stripping voltammetry (SWASV) for the first time. The electrochemical parameters influencing on deposition and stripping of metal ions, such as supporting electrolytes, pH value, deposition potential and deposition time, were also optimized. The results showed that the Al4SiC4 modified GCE exhibited excellent stripping response of Cu2+ and the stripping peaks response increased linearly with increasing concentration of Cu2+ in the ranges of 400 to 2200 nM. Under the optimized conditions the favorable sensitivity of the Al4SiC4 modified GCE toward trace Cu2+ was 1.49 μA μM−1 and the limit of detection (S/N=3) was estimated to be 2.76 nM. More importantly, Al4SiC4 modified GCE had an excellent stability and negligible interference from other coexisting metal ions in the electrochemical determination of Cu2+.

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“…1,2 As their applications grow, specific requirements for the preparation of anodic alumina film are increased. For example, a transparent porous anodic alumina film on glass is highly desired in optical and optoelectronic devices.…”

mentioning

confidence: 99%

Nanoporous Anodic Alumina Film on Glass: Improving Transparency by an Ion-Drift Process

Park

Lee

Cho

et al. 2005

Electrochem. Solid-State Lett.

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A novel method for increasing the transparency of an anodic aluminum oxide film on glass is demonstrated. The residual aluminum layer, which limits the transparency of the porous aluminum oxide film, was fully converted to its oxide by the ion-drift process. The transmittance of the film was improved more than 20% over the visible-near infrared range and was similar to that of a glass substrate. This ion-drift process also improved the adhesion of the anodic alumina film to the glass substrate.Nanoporous anodic aluminum oxide films are of great interest in various applications because of their stability and unique structural and optical properties. 1,2 As their applications grow, specific requirements for the preparation of anodic alumina film are increased. For example, a transparent porous anodic alumina film on glass is highly desired in optical and optoelectronic devices.The anodization of an aluminum film on an insulating substrate always leaves an unoxidized aluminum metal and results in a semitransparent ͑dark colored͒ anodic alumina film. Miney et al. estimate the thickness of the unoxidized aluminum layer to be ϳ1.2 nm from an ellipsometric study. 3 Although the remaining aluminum layer is very thin, the transmittance of the anodic alumina film rarely exceeds 60%, as aluminum is one of the most optically dense metals.Nearly all the previous work on complete anodization of aluminum films on insulating substrates was done by inserting a conducting medium between the substrate and the aluminum layer. Very thin layers of valve metals, such as titanium, 4 niobium, 5 and tantalum, 6,7 were introduced for this purpose. However, this produces a bulge of valve metal oxide and leaves the unoxidized layer that also reduces the transmittance. Chu et al. utilizes a transparent indium-tin oxide ͑ITO͒ layer as a conducting medium and the transmittance of the anodic alumina film was nearly equivalent to that of ITO glass. 8 It was found to be very difficult to prepare a uniform, large area anodic alumina film, however. Temperature, electric field, and the thickness of aluminum and conducting films must be uniform over entire substrate and the anodization process must be critically controlled. Otherwise, nonuniform anodization will be obtained. Also, gas evolution and sparking destroy the alumina film as the anodization reaches the Al-conducting medium interface. In addition, the adhesion between the alumina film and substrate is poor if an aluminum layer on a conducting medium is anodized. 9 This lack of adhesion may be beneficial for some purposes such as a nano-pattern transfer and preparation of free standing films, but it is highly undesirable in most applications.In other contexts, anodic bonding is widely used in microsystem technology to join glass and silicon. 10 The basic mechanism is the thermal activation of alkali and oxygen ions and their drift in the electric field applied during bonding. 11,12 This generates a high electric field within the depletion region and forms homogeneous and reliable bonds through...

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Advanced Approaches to Functional Glasses

Cited by 3 publications

References 20 publications

Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film

Probing of 2 dimensional confinement-induced structural transitions in amorphous oxide thin film

Selective Determination of Copper (II) Based on Aluminum Silicon Carbide Nanoparticles Modified Glassy Carbon Electrode by Square Wave Stripping Voltammetry

Nanoporous Anodic Alumina Film on Glass: Improving Transparency by an Ion-Drift Process

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