Advanced electrical characterization of AlN/Si based heterogeneous junction for photonic applications

Hassan, Safaa; Ahmed, Sheikh Z.; Ali, Muhammad Umair; Fahad, Shah

doi:10.1016/j.mssp.2021.106292

Cited by 6 publications

(6 citation statements)

References 19 publications

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“…To investigate the density and localization of these traps, Charge Deep Level Transient Spectroscopy (Q-DLTS) was employed. This technique estimates the quality and quantity of traps by measuring the transients of trapped charges during electric field interruptions [14,41]. The QDLTS spectra plotted in Fig.…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…12 at room temperature, show the change in charge (∆Q) as a . This behavior can be described by "( 5)" and "( 8)" [14,41,42].…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…For minimizing the errors t1 and t2 should be perfectly proportional t2/t1=α. Charges at initial (t1) and final (t2) times can be described as [14,41]:…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…Where '𝜎' is the capture cross-section, 'T' is the Temperature is Kelvin, 'ET' is the Trap level Energy, 'K' is Boltzmann constant, and 'Tn' is defined as [14,41,44]:…”

Section: Electrical Characterizationmentioning

confidence: 99%

See 3 more Smart Citations

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Younus,

Shuja,

Ali

2023

IEEE Photonics J.

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Abstract-ZnO-based devices are highly promising for applications involving light-matter interaction. This work explores the impact of light-matter interaction on ion-induced ZnO structures and their respective energy band profiles. Incorporation of various ions, (Au + , B + , Cu + , P + ) into the ZnO lattice, deposited via magnetron sputtering on an n-type Si substrate was investigated in detail. To assess the impact of these ions on the ZnO surface, monte-carlo simulations at low energies were performed and optimal ion dose and energy conditions were determined. The resulting post-fabrication devices underwent comprehensive structural, morphological, optical, and electrical diagnostics. X-ray diffraction (XRD) analysis confirmed the wellmaintained crystal structure of the ZnO lattice along the <100> direction for all implant sequences. Notably, the gold (Au + ) implant exhibited the highest light extinction into the ZnO matrix, as indicated by the extinction coefficient and refractive index data. This observation suggested that Au + implantation could effectively generate electron-hole pairs. The photovoltage and dark/light current measurements provided further evidence of enhanced light-matter interactions and responsivity in the Au + -implanted devices owing to light-induced currents. Furthermore, the energy bands of all implant cases were profiled by Charge Deep Level Transient Spectroscopy (Q-DLTS) measurements by evaluating discrete energy states within the ZnO lattice.

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Section: Electrical Characterizationmentioning

confidence: 99%

“…12 at room temperature, show the change in charge (∆Q) as a . This behavior can be described by "( 5)" and "( 8)" [14,41,42].…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…For minimizing the errors t1 and t2 should be perfectly proportional t2/t1=α. Charges at initial (t1) and final (t2) times can be described as [14,41]:…”

Section: Electrical Characterizationmentioning

confidence: 99%

“…Where '𝜎' is the capture cross-section, 'T' is the Temperature is Kelvin, 'ET' is the Trap level Energy, 'K' is Boltzmann constant, and 'Tn' is defined as [14,41,44]:…”

Section: Electrical Characterizationmentioning

confidence: 99%

See 2 more Smart Citations

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Younus,

Shuja,

Ali

2023

IEEE Photonics J.

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“…The melting method is commonly used for producing bulk crystals like polycrystalline silicon ingot, sapphire. − However, due to AlN’s extremely high melting point and decomposition pressure as well as the AlN decomposes before melting, melting method is not suitable for growing AlN crystals. Instead, to grow AlN crystals, following growth methods are more practiced: hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), metal organic vapor deposition (MOCVD) and physical vapor transport (PVT). , HVPE, MBE, and MOCVD are the chief methods intended for growing AlN films.…”

Section: Introductionmentioning

confidence: 99%

Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation

Chen,

Ding,

et al. 2023

Ind. Eng. Chem. Res.

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The growth of high-quality aluminum nitride (AlN) crystals heavily relies on precision of high temperatures that the thermal gradient impacts their growth rate, size, and quality, especially when the physical vapor transport (PVT) method is used. In this paper, we proposed innovative mechanical and design improvements to the crystal growing furnace by optimizing the shape and height of the blind hole to achieve a uniform or better thermal distribution. We presented simulation results of the thermal field in the crystal growing device using COMSOL and found that the proposed modification effectively reduces the thermal gradient and minimizes the thermal stress. Additionally, the new structure promotes organized natural convection, which benefits species transport in the furnace.

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Investigation of AlN/Si based heterogeneous Junction using inter-digitated electrodes for enhanced UV light detection

Murtaza

Ahmed

Ali

2022

Optik

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Advanced electrical characterization of AlN/Si based heterogeneous junction for photonic applications

Cited by 6 publications

References 19 publications

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Fabrication and Analysis of Ion-Engineered ZnO Device Structures for Optoelectronic Applications

Structural Design Optimization of Physical Vapor Transport Furnace for Aluminum Nitride Crystal Growth via Modeling and Simulation

Investigation of AlN/Si based heterogeneous Junction using inter-digitated electrodes for enhanced UV light detection

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