Advanced electron beam resist requirements and challenges

Jamieson, Andrew; Kim, Yong Kwan; Olson, Bennett; Lu, Maiying; Wilcox, Nathan

doi:10.1117/12.898901

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…For the productivity, high throughput is one of the most important requirements for mask manufacturing, and a reasonable write time is necessary even for low-sensitivity resist to accomplish better pattern fidelity. [32][33][34][35] Robustness is also required to minimize system downtime and improve productivity. In addition, smarter data handling is required for complex curve data to reduce computing power and the cost of ownership.…”

Section: Concepts Of Mbm Seriesmentioning

confidence: 99%

“…In mask fabrication of the 5 nm node and beyond, the demand for lower sensitivity resists is growing sharply because it is widely understood that the shot noise, which is a statistical fluctuation of an electron's distribution in resist, is a dominant factor to degrade CD uniformity and line-edge roughness. [32][33][34][35] Figure 5 shows the relationship between dose and local CD uniformity (LCDU). The LCDU is improved proportionally to 1 Dose, / which is a general relationship between noise intensity and averaging number.…”

Section: Concepts Of Mbm Seriesmentioning

confidence: 99%

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Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, development of NuFlare Technology’s multi-beam (MB) mask writing system MBM-2000 series is reviewed, and future plans for the MBM series are discussed. The MB mask writing systems were designed on the basis of unique concepts suitable for high-volume production of leading-edge masks, i.e., high beam current density, a reliable beam blanking aperture array (BAA) system with a 50-keV single-stage acceleration optics, high-speed inline pixel-level dose correction, and a distinctive hardware system for charging effect reduction. The latest MB mask writing system, MBM-2000PLUS, achieves a high throughput of 8.7 hours in a 104×130 mm2 writing area for a 150 μC/cm2 resist thanks to a high beam current density of 3.2 A/cm2. In addition, a global position accuracy of 1.2 nm, a local position accuracy of 0.5 nm, and a local critical dimension uniformity of 0.61 nm are achieved. The BAA system has shown long-term stable operation for more than one year. The high productivity and writing accuracy realized by NuFlare Technology’s concepts will contribute to further miniaturization of semiconductors.

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Section: Concepts Of Mbm Seriesmentioning

confidence: 99%

Section: Concepts Of Mbm Seriesmentioning

confidence: 99%

Recent progress and future of electron multi-beam mask writer

Yasuda¹,

Nomura²,

Matsumoto³

et al. 2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Requirements and strategies of High-NA EUV mask using MBMW

Cho,

Noh,

PArk

et al. 2024

Photomask Technology 2024

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High-resolution EUV mask patterning capability has been one of the key factors to enable sub-10nm nanofabrication. Especially, the emergence of the Multi-Beam Mask writer (MBMW) in photomask lithography was a breakthrough for achieving the write time independent of pattern complexity with fine resolution, opening the EUV era. However, as the transition towards High-NA EUV technology is ongoing to extend Moore's law beyond 2nm-node and over, the novel exposure system challenges photomask manufacturing for higher resolution, accurate patterning fidelity and higher overlay due to 40% reduced resolution limit. Therefore, development of photomask lithography technologies including improved mask writer, photoresist, new materials of the substrate, and optimized EUV process is necessary to meet the desired minimum feature size and local fidelity such as local CDU, line edge roughness (LER) etc. In this paper, we aim to establish the evaluation method for optimized photomask process in upcoming High-NA EUV era. We analyze the budget of each factor contributing to EUV mask patterning performance including locality and resolution, and evaluate the total process window using MBMW. Finally, we discuss the comprehensive requirements and strategies on MBMW technology and relevant process to satisfy the mask patterning in the next generations from EUV mask maker's point of view.

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Advanced electron beam resist requirements and challenges

Cited by 2 publications

References 7 publications

Recent progress and future of electron multi-beam mask writer

Recent progress and future of electron multi-beam mask writer

Requirements and strategies of High-NA EUV mask using MBMW

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