Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier

Amir, Faisal; Mitchell, C. J.; Farrington, N.; Missous, M.

doi:10.1117/12.830296

Cited by 7 publications

(13 citation statements)

References 8 publications

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“…Electronic mail: ata.khalid@glasgow.ac.uk 2 However, there is increasing evidence that this assumed limit is perhaps not as absolute as previously thought. Experiments with short vertical Gunn diodes have shown operation of vertical Gunn devices with a transit region as short as 0.7 μm [15], and have reported operation of short Gunn diodes at frequencies well in excess of previously theoratical limits [16].…”

Section: Introductionmentioning

confidence: 99%

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Khalid

Dunn

Macpherson

et al. 2014

Journal of Applied Physics

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The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental modethe shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning device the minimum length of the transit region is about 1.5μm, limiting the devices to fundamental mode operation at frequencies of roughly 60 GHz. Study of these devices by more advanced Monte Carlo techniques that simulate the ballistic transport and electron-phonon interactions that govern device behaviour, offers a new lower bound of 0.5μm, which is already being approached by the experimental evidence that has shown planar and vertical devices exhibiting Gunn operation at 600nm and 700nm, respectively. The paper presents results of the first ever THz submicron planar Gunn diode fabricated in In0.53Ga0.47As on an InP substrate, operating at a fundamental frequency above 300 GHz. Experimentally measured rf power of 28 µW was obtained from a 600 nm long ×120 µm wide device. At this new length, operation in fundamental mode at much higher frequencies becomes possible -the Monte Carlo model used predicts power output at frequencies over 300 GHz.

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Section: Introductionmentioning

confidence: 99%

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Khalid

Dunn

Macpherson

et al. 2014

Journal of Applied Physics

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show abstract

“…Extensive DC modelling coupled with empirical data and device theory initially pointed to a transit region of 0.4µm as the minimum capable of supporting stable oscillation 4 . It is noted that time-domain simulations were not available at the time due to issues with computational solution convergence.…”

Section: 4µm -06µm Transit Region Device Results (Xmbe189)mentioning

confidence: 99%

“…After the successful development of physical models using SILVACO to predict the DC characteristics of a device given its epitaxial structure and physical geometry [1][2][3][4][5][6][7][8] , the computational work has been extended to produce the time-domain responses of these devices: this has in turn enabled theoretical investigation of the upper frequency limit for GaAs Gunn oscillator operation. The simulated DC characteristics of the models reported have been expanded and the steady state oscillatory behaviour obtained for a variety of devices which are presented in this paper, and where possible, compared to measured results.…”

Section: Introductionmentioning

confidence: 99%

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

et al. 2010

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Simulated RF time-domain characteristics for advanced Gunn diodes with hot electron injection and sub-micron transit region lengths for use at frequencies over 100GHz are reported. The physical models used have been developed in SILVACO and are compared to measured results. The devices measured were originally fabricated to investigate the feasibility of GaAs Gunn diode oscillators capable of operating at D-band frequencies and ultimately intended for use in high power (multi-mW) Terahertz sources (~0.6THz) when used in conjunction with novel Schottky diode frequency multiplier technology. The device models created using SILVACO are described and the DC and time-domain results presented. The simulations were used to determine the shortest transit region length capable of producing sustained oscillation. The operation of resonant disk second harmonic Gunn diode oscillators is also discussed and accurate electromagnetic models created using Ansoft High Frequency Structure Simulator presented. Novel methods for combining small-signal frequency-domain electromagnetic simulations with time-domain device simulations in order to account for the significant interactions between the diode and oscillator circuit are described.

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“…It was reported that the operating frequency obtained from this device is in the range of 0.3 THz-0.4 THz. Its high-frequency property coupled with wide bandwidth is valuable for highpower and high-frequency applications [3]. With the use of common materials such as GaAs [4] and InP [5], a simple device structure could produce an economical compact THz source to cater to the evolving IoT technology.…”

Section: Introductionmentioning

confidence: 99%

Analysis of notch-δ-doped GaAs-based Gunn diodes

Akhbar¹,

Ong²

2022

J. Phys. D: Appl. Phys.

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The performances of GaAs-based Gunn diodes with a notch-δ-doped structure have been studied in this work. The δ-doped effect has been analysed using Monte Carlo modelling in terms of temporal evolution of current density, electric field profile, electron energy, mean velocity, and occupancy in Γ and higher valleys. The presence of a δ-doped layer after the notch caused a significant increase in the harmonic current amplitude of the device, where the growth of high field domain can be attributed to a slow electron track due to the well-known Gunn effect and an additional fast electron track which appears over a short time window when the domain is reaching the anode. An optimised GaAs notch-δ-doped structure with 700 nm device length including 100 nm notch and 5 nm δ-doped layer can generate signals at fundamental frequency of 262 GHz with a current harmonic amplitude of 29.4×107 A/m2, which is almost twice of that without δ-doped layer. Its second and third harmonic signals are found substantial reaching into the THz range of 512 GHz and 769 GHz.

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Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier

Cited by 7 publications

References 8 publications

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

Time-domain analysis of sub-micron transit region GaAs Gunn diodes for use in terahertz frequency multiplication chains

Analysis of notch-δ-doped GaAs-based Gunn diodes

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