Advanced high speed slow-light silicon modulators in the O-band for low power optical interconnects in data centers

Zanzi, Andrea; Rosa, Agostinho C.; Oriol, Arteaga; Sanchís, Pablo; Martí, J.; Brimont, A.

doi:10.1109/group4.2017.8082240

Cited by 2 publications

(3 citation statements)

References 3 publications

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“…Slowing down the optical signal propagating in a structure, renders photons more sensitive to linear and nonlinear perturbations of the refractive index. This can be useful in a number of applications such as optical modulation [2], monitoring [3], correlation [4], switching [5], quantum information processing [6], buffering [7] and sensing [8]. Several SL mechanisms have been researched.…”

Section: Introductionmentioning

confidence: 99%

Slow light in quantum dot vertical cavity semiconductor optical amplifiers

Mourkioti

Georgiou

Kamalakis

et al. 2019

Semicond. Sci. Technol.

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Slow light in the Technologically important devices InGaAs/GaAs quantum dot (QD) Vertical Cavity Semiconductor Optical Amplifiers (QD-VCSOAs) is studied. The presented work benefits from the possibility offered by QD-VCSOA structures for operation exclusively at the amplifying regime without reaching threshold unlike Quantum Well (QW) VCSOAs. The mathematical formulation of the main slow down metric based on gain dispersion is presented. The effects of various functional (current, input signal) and structural (inhomogeneity, cavity length, density of dots etc) properties on the optical delay properties of the QD-VCSOA are identified and relevant design strategies are outlined. The numerical investigation concludes that considerably higher Group Delays can be achieved in QD-VCSOAs compared to QW-VCSOAs by means of static (i.e. structural design) and dynamic (i.e. injection current) properties. The results highlight the flexibility (tunability) offered by the QDs in tailoring SL properties of the VCSOA.

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Section: Introductionmentioning

confidence: 99%

Slow light in quantum dot vertical cavity semiconductor optical amplifiers

Mourkioti

Georgiou

Kamalakis

et al. 2019

Semicond. Sci. Technol.

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“…Returning to Fig. 5(b), it is true that an EO PIN slow-light waveguide provides good 1 × 1 phase shifting, 68 but there are two challenging issues for switching: the sidewalls on the passband profile may not be "sloped" enough, and TO ∆λ shift may not be adequate. Regarding the 2-Sagnac waveguide of Fig.…”

Section: Narrowband 2 × 2 Mzismentioning

confidence: 99%

“…4 and 5: the nanobeam, 60,[62][63][64] the modified nanobeam with anti-slot or bowtie holes, 65 the complex Bragg grating waveguide (CBGW) with an irregular pattern of teeth, 66 the two-Sagnacloop waveguide that functions as a Fabry Perot resonator, and the slow-light waveguide. 67,68 The semiconductor nanobeams include Ge at 2 µm as well as Si at telecom. The CBGW has the virtue of offering an arbitrary, pre-chosen transmission spectrum with multiple peaks and spacings.…”

Section: Narrowband 2 × 2 Mzismentioning

confidence: 99%

Tutorial: Integrated-photonic switching structures

Soref

2018

APL Photonics

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Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable “mesh” switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ∼1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

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Advanced high speed slow-light silicon modulators in the O-band for low power optical interconnects in data centers

Cited by 2 publications

References 3 publications

Slow light in quantum dot vertical cavity semiconductor optical amplifiers

Slow light in quantum dot vertical cavity semiconductor optical amplifiers

Tutorial: Integrated-photonic switching structures

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