Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes

Matsui, Miyako; Nozoe, Mari; Arauchi, Keiko; Takafuji, A.; Nishiyama, Hidetoshi; Goto, Yasushi

doi:10.1117/12.473499

Cited by 8 publications

(2 citation statements)

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“…The via chains fabricated on the wafers were inspected by using an electronbeam wafer inspection system ͑Hitachi I-5010͒. [3][4][5] Defects could be detected at high speed by comparing secondary electron images dieto-die or cell-to-cell as the electron-beam was scanned on the wafer. The irradiation energy of the electron-beam was varied from 0.5 to 3.0 keV, and the beam current was 100 nA.…”

Section: Methodsmentioning

confidence: 99%

“…We previously reported a technique for detecting incomplete contact failure by applying high-speed electron-beam wafer inspection. [3][4][5] That is, incomplete contact failures in plug and hole patterns with high-aspect ratios could be detected from the voltage contrast 6 of the secondary electron images. The sensitivity of detecting incomplete contact failures strongly depends on the beam current and the charging voltage.…”

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confidence: 99%

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Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection

Matsui

Zhang

Nozoe

et al. 2004

J. Electrochem. Soc.

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A technique using an electron-beam to inspect wafers with Cu interconnects was developed. It can detect defects such as voids or incomplete contact failures with resistances of more than 10 7 ⍀ by utilizing the voltage contrast of a secondary electron image. The technique is performed by controlling the charging voltage of the interconnect while the electron-beam is irradiating the wafer. The charging voltage was found to depend on the conditions of the incident electron-beam, including the incident energy. To investigate the generation of voltage contrast in a Cu via chain, the electronic characteristics of detected defects were measured with probes. It was found that the resistance of a defect measured during electron irradiation and that measured with probes agree well. The contrast of a secondary electron image depends on the resistance of the differential voltage between the ends of a defect during electron-beam irradiation. To detect voids with high sensitivity, the differential voltage between the ends of a defect should be kept between 1 and 2 V, because the resistance of the defect suddenly decreases when the differential voltage is increased beyond a certain point.

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Section: Methodsmentioning

confidence: 99%

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confidence: 99%

Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection

Matsui

Zhang

Nozoe

et al. 2004

J. Electrochem. Soc.

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Use of Monte Carlo models in the development and validation of CD operators

Frase

Häßler-Grohne

2005

Surface & Interface Analysis

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Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection

Matsui

Machida

Mine

et al. 2007

J. Micro/Nanolith. MEMS MOEMS

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We analyze the electron-irradiation damage induced in wafers by scanning electron microscope ͑SEM͒ inspection, which uses SEM images of voltage contrast formed by the charges on the pattern. The effects of electron-beam energy and charging on a metal-oxide semiconductor ͑MOS͒ capacitor are studied. We find that the higher energy electron beam, whose electron range is larger than the thickness of the gate electrode, creates traps at the interface between the silicon substrate and the gate dielectric. The flat-band voltage is shifted by the created traps. Although these traps are created by the transmission of the electron beam into the dielectric, they are not created only by charging on the gate electrode; neither is an oxide fixed charge created in the MOS capacitor. Accordingly, for damage-free inspection of MOS devices, the electron-beam energy should be low enough that the electron range is smaller than the thickness of the gate electrode. On the other hand, the flat-band voltage does not shift, owing to charging on the pattern surface during the electron irradiation. However, the gate dielectric is broken down by charging on the gate electrode at high voltage. Accordingly, for damage-free inspection, the charging voltage should be controlled so as not to break down the gate dielectric.

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Advanced inspection technique for deep-submicron and high-aspect-ratio contact holes

Cited by 8 publications

References 0 publications

Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection

Detecting Defects in Cu Metallization Structures by Electron-Beam Wafer Inspection

Use of Monte Carlo models in the development and validation of CD operators

Evaluation of damage induced by electron-beam irradiation to metal-oxide semicondoctor gate pattern and method for damage-free inspection

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