Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications

Yang, Boyi; Wang, Jun; Xu, Shuming; Korec, J.; Shen, Z. John

doi:10.1109/tpel.2012.2230407

Cited by 15 publications

(5 citation statements)

References 15 publications

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“…P OWER metal-oxide semiconductor field-effect transistors (MOSFETs) are widely used in space environment, which can be applied in power supply [1], dc-dc converters, and so on [2]. Single-event Burnout (SEB) can be triggered by the passing of a heavy ion through a power device when biased in its off state.…”

Section: Introductionmentioning

confidence: 99%

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Wang

Zhang

Cao

et al. 2014

IEEE Trans. Power Electron.

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This paper investigates the single-event burnout (SEB) simulation results for both the standard and hardened structure of power U-shape gate MOSFETs (UMOSFETs). The Schottky source is proposed to reduce the work of the parasitic bipolar transistor inherent to the device. The hardened structure of power UMOSFETs with the Schottky source and N buffer layer is given, which can work normally and improve the SEB performance effectively. Both 70-and 120-V power MOSFETs are simulated and discussed in this paper. The SEB threshold voltages are increased to more than 94 percent of the breakdown voltages for both 70-and 120-V hardened structure, compared to 54 percent for standard power UMOSFETs.Index Terms-Hardened structure, power UMOSFET, Schottky source, single-event burnout (SEB).

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Section: Introductionmentioning

confidence: 99%

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Wang

Zhang

Cao

et al. 2014

IEEE Trans. Power Electron.

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“…In this layout, the design of the gate driver circuit of MOSFET is different from that in power electronics. Usually, the gate driver circuit should exert voltage between the MOSFET gate and source to supply a sufficient charging current [ 22 , 23 ]. In Figure 3 , the gate driver circuit exerts voltage between the MOSFET gate and ground.…”

Section: Methodsmentioning

confidence: 99%

Investigation of the Pulsing Characteristic of a Carbon Nanotube Emitter

Zhu

Jang

et al. 2022

Nanomaterials

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The carbon nanotube (CNT) field emitter is suitable for the high frequency pulsing of X-ray. Pulsing reduces 49% of the dose in grid-controlled fluoroscopy and improves the image of moving objects. Various structures and manufacturing processes are being studied. However, more studies on the dynamic characteristic of a pulsing CNT and its application are needed. In this study, the combined dynamics including the field emission, MOSFET, and modified gate driver for MOSFET have been analyzed. In this configuration, between the cathode of the tube and ground, there is a MOSFET switch that turns the tube current on/off and a shunt resistor that measures the tube current. Due to the high impedance of the vacuum between the gate and cathode of the tube, about 85% of the gate voltage is still exerted between the Gate and cathode of the tube during the off-state of the MOSFET. Therefore, space charges are built during the off-state and then released at the beginning of the on-state of the MOSFET. The modified gate driver structure for MOSFET that we propose in this paper can limit the amount of current flow through the cathode. Tube current (boosted current) can be accurately controlled through a modified gate driver structure. Combining the boosted current and pulse control of MOSFET, the dynamic current performance of a CNT tube can be enhanced and the average tube current or dose can be accurately controlled. Experiments, simulation, and analysis have been conducted to study the combined dynamics and its applications.

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“…X1 represents an instance of the CSD16570Q5B N-Channel NexFET power MOSFET. NexFET is a new generation of power MOSFETs introduced with the aim to reduce the inherent parasitic capacitance, keeping similar RDSON values with the trench-gate power MOSFETs [24].…”

Section: Cell Balancing Circuit Modelmentioning

confidence: 99%

SPICE Model of a Passive Battery Management System

Guran,

Florescu,

Perişoară

2024

IEEE Access

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The migration towards green energy has seen a big increase in the number of electric vehicles and energy storage systems existing on the market, where the battery is a fundamental part. In order to provide the necessary voltage and current for the power supply of the system, the battery cells are connected in series and/or in parallel. These types of connections lead to an imbalance in the cells' state-of-charge over time and drastically decrease the battery life. In order to prevent this imbalance, a battery management system must be used. At the moment, the simulation is used before the physical implementation in order to verify the system design, with SPICE being the preferred mixed-signal simulator. However, the literature focuses on the physical design and implementation of BMS without treating the SPICE simulation. For this reason, this article proposes for the first time the implementation and verification of a passive battery management system simulation model in the most used SPICE-based environment, OrCAD Capture. The BMS model consists of a modular approach, with the following blocks used in the implementation: cell voltage sensing, battery pack current sensing, cell balancing, power supply, microcontroller. Each block is simulated and verified separately and then integrated into the final BMS model. The simulation results of the final BMS model show that the system performs the balancing of the cells correctly according to the balancing algorithm, while the maximum error in the measurement of the cell voltages and battery pack current is 1.5%. Based on these results, the proposed methodology can be used in the design of real-world battery management systems to reach the best possible architecture before the physical implementation, leading to cost and time optimization.

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Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications

Cited by 15 publications

References 15 publications

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Single-Event Burnout Hardened Structure of Power UMOSFETs With Schottky Source

Investigation of the Pulsing Characteristic of a Carbon Nanotube Emitter

SPICE Model of a Passive Battery Management System

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