Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction

Figueiro, Thiago; Choi, Kang‐Hoon; Gutsch, Manuela; Freitag, Martin; Hohle, Christoph; Tortai, J.H.; Saib, Mohamed; Schiavone, Patrick

doi:10.1117/12.965312

Cited by 2 publications

(1 citation statement)

References 13 publications

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“…7 An example showing one test result from the procedure is shown in Fig. This was done by fitting exposure results of various dedicated test patterns at multiple dose levels to the double Gaussian model.…”

Section: Physical Modelmentioning

confidence: 99%

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Brandt

Belledent

Tranquillin

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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For proximity effect correction in 5 keV e-beam lithography, three elementary building blocks exist: dose modulation, geometry (size) modulation, and background dose addition. Combinations of these three methods are quantitatively compared in terms of throughput impact and process window (PW). In addition, overexposure in combination with negative bias results in PW enhancement at the cost of throughput. In proximity effect correction by over exposure (PEC-OE), the entire layout is set to fixed dose and geometry sizes are adjusted. In PEC-dose to size (DTS) both dose and geometry sizes are locally optimized. In PEC-background (BG), a background is added to correct the long-range part of the point spread function. In single e-beam tools (Gaussian or Shaped-beam), throughput heavily depends on the number of shots. In raster scan tools such as MAPPER Lithography's FLX 1200 (MATRIX platform) this is not the case and instead of pattern density, the maximum local dose on the wafer is limiting throughput. The smallest considered half-pitch is 28 nm, which may be considered the 14-nm node for Metal-1 and the 10-nm node for the Via-1 layer, achieved in a single exposure with e-beam lithography. For typical 28-nm-hp Metal-1 layouts, it was shown that dose latitudes (size of process window) of around 10% are realizable with available PEC methods. For 28-nm-hp Via-1 layouts this is even higher at 14% and up. When the layouts do not reach the highest densities (up to 10∶1 in this study), PEC-BG and PEC-OE provide the capability to trade throughput for dose latitude. At the highest densities, PEC-DTS is required for proximity correction, as this method adjusts both geometry edges and doses and will reduce the dose at the densest areas. For 28-nm-hp lines critical dimension (CD), hole&dot (CD) and line ends (edge placement error), the data path errors are typically 0.9, 1.0 and 0.7 nm (3σ) and below, respectively. There is not a clear data path performance difference between the investigated PEC methods. After the simulations, the methods were successfully validated in exposures on a MAPPER pre-alpha tool. A 28-nm half pitch Metal-1 and Via-1 layouts show good performance in resist that coincide with the simulation result. Exposures of soft-edge stitched layouts show that beam-to-beam position errors up to AE7 nm specified for FLX 1200 show no noticeable impact on CD. The research leading to these results has been performed in the frame of the industrial collaborative consortium IMAGINE. Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/15/2015 Terms of Use: http://spiedl.org/terms

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Section: Physical Modelmentioning

confidence: 99%

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Brandt

Belledent

Tranquillin

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

Self Cite

View full text Add to dashboard Cite

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Alternative stitching method for massively parallel e-beam lithography

Brandt

Tranquillin

Wieland

et al. 2015

J. Micro/Nanolith. MEMS MOEMS

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In this study, a stitching method other than soft edge (SE) and smart boundary (SB) is introduced and benchmarked against SE. The method is based on locally enhanced exposure latitude without throughput cost, making use of the fact that the two beams that pass through the stitching region can deposit up to 2× the nominal dose. The method requires a complex proximity effect correction that takes a preset stitching dose profile into account. Although the principle of the presented stitching method can be multibeam (lithography) systems in general, in this study, the MAPPER FLX 1200 tool is specifically considered. For the latter tool at a metal clip at minimum half-pitch of 32 nm, the stitching method effectively mitigates beam-to-beam (B2B) position errors such that they do not induce an increase in critical dimension uniformity (CDU). In other words, the same CDU can be realized inside the stitching region as outside the stitching region. For the SE method, the CDU inside is 0.3 nm higher than outside the stitching region. A 5-nm direct overlay impact from the B2B position errors cannot be reduced by a stitching strategy. Brandt et al.: Alternative stitching method for massively parallel e-beam lithography Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 08/20/2015 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction

Cited by 2 publications

References 13 publications

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Demonstration of electronic design automation flow for massively parallel e-beam lithography

Alternative stitching method for massively parallel e-beam lithography

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