Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography

Shirakawa, Michihiro; Inoue, N.; Furutani, Hajime; Yamamoto, Kei; Goto, Akiyoshi; Fujita, Mitsuhiro

doi:10.1117/12.2085744

Cited by 6 publications

(6 citation statements)

References 5 publications

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“…In 193 nm immersion lithography, NTD is an effective way to improve the resolution limits and process latitude for printing contact holes and trenches. 49,50 To confirm that AD-10Boc can be used as an NTD resist, the solubility of AD-10Boc and AD-10OH in different solvents was investigated (Table S1, ESI†). Organic solvents, such as toluene, 1-chlorocyclohexane, dichloromethane, anisole, and n -hexane, exhibit a distinct solubility selectivity for AD-10Boc and AD-10OH, making them good candidates for NTD.…”

Section: Resultsmentioning

confidence: 99%

A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography

Chen

et al. 2022

J. Mater. Chem. C

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Section: Resultsmentioning

confidence: 99%

A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography

Chen

et al. 2022

J. Mater. Chem. C

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“…There is an estimation that patterning cost of DTD is about a half of SADP [1]. In recent report, resolution of 24 nm half pitch and k 1 factor 0.149 were reported [4], but pattern roughness is still major challenge of such process.…”

Section: Introductionmentioning

confidence: 99%

“…But the major problem of SAQP is high cost due to its process complexity derive from multiple etch steps. For more cost-effective double patterning, several techniques which only use clean track tool were proposed [1][2][3][4][5][6]. One of the representative of these techniques is known as dual-tone development (DTD).…”

Section: Introductionmentioning

confidence: 99%

Development of Materials-based Pitch Split Process

Hori

Watanabe

Tsunoda

et al. 2016

J. Photopol. Sci. Technol.

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There are several options for sub-10nm fabrication such as extreme ultra violet (EUV) lithography, directed self-assembly (DSA), and ArF multiple patterning. For further extension of ArF lithography, one of the key challenges is cost effectiveness. In this paper, a new double patterning method -pattern split process (PSP), which is based on dual tone development is demonstrated. Different from conventional DTD, additional acid and base materials were used in this process to gain high deprotection contrast. By PSP, double pitch frequency pattern which has improved roughness was successfully obtained. Also other basic parameter such as focus margin, wafer uniformity and resolution are reported.

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“…Last year, we reported ACCEL (Advanced Chemical Contrast Enhancement Layer) technique that can enhance dissolution contrast of NTI process [5]. In fact, lithography performances such as exposure latitude and DOF improved by about 20% by applying ACCEL to a conventional NTI resist.…”

Section: Introductionmentioning

confidence: 99%

“…Especially, the number of lithography steps and etching steps has been expanded by the combination of processes, and it has been occupying a large portion of total manufacturing cost [6,7]. DTD (Dual Tone Development) process is one of the simplest pitch split process which can reduce exposure steps as we reported last year [5,[8][9][10]. KrF-NTI which can show the equivalent performance to an ArF-PTD system is also effective to reduce tool cost [11,12].…”

Section: Introductionmentioning

confidence: 99%

Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process

Shirakawa

Kato

Furutani

et al. 2016

J. Photopol. Sci. Technol.

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Negative tone imaging (NTI) process is a method for obtaining a negative-tone reversal pattern by developing with an organic solvent. As NTI process can break-through the resolution limit of a conventional positive tone development (PTD) process at specific pattern such as trenches and contact holes, it has been applied for a mass production in 20nm and 14nm nodes devices. In NTI system, because a developer is changed from a hydrophilic aqueous solution to a hydrophobic organic solvent, it is possible to review the common resist stack which is optimized for a PTD process. In this paper, we examined the possibility of a bi-layer process using a Si-containing NTI resist. Etching selectivity between the Si-NTI resist and a SOC improved by raising Si-content of the Si-NTI resist, but resolution deteriorates as a trade-off. By suppressing swelling behavior of the Si-NTI resist with a polymer structure control, we overcame this trade-off. As a result, in sub-90 nm pitch L/S and CH patterns, the resolution of the Si-NTI resist achieved comparable level to a conventional NTI resist. In addition, SOC etching was successfully carried out by using the Si-NTI resist pattern as an etching hard mask.

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Advanced patterning approaches based on negative-tone development (NTD) process for further extension of 193nm immersion lithography

Cited by 6 publications

References 5 publications

A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography

A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography

Development of Materials-based Pitch Split Process

Challenges for Immersion Lithography Extension based on Negative Tone Imaging (NTI) Process

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