Advanced Power MOSFET Concepts

Abstract

except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights.Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) DedicationThe author would like to dedicate this book to his wife, Pratima, for her unwavering support throughout his career devoted to the enhancement of the performance and understanding of power semiconductor devices.v . PrefaceWith increased awareness of the adverse impact on the environment resulting from carbon emissions into the atmosphere, there is a growing demand for improving the efficiency of power electronic systems. Power semiconductor devices are recognized as a key component of all power electronic systems. It is estimated that at least 50 percent of the electricity used in the world is controlled by power devices. With the wide spread use of electronics in the consumer, industrial, medical, and transportation sectors, power devices have a major impact on the economy because they determine the cost and efficiency of systems. After the initial replacement of vacuum tubes by solid state devices in the 1950s, semiconductor power devices have taken a dominant role with silicon serving as the base material. These developments have been referred to as the Second Electronic Revolution.In the 1970s, the power MOSFET product was first introduced by International Rectifier Corporation. Although initially hailed as a replacement for all bipolar power devices due to its high input impedance and fast switching speed, the silicon power MOSFET has successfully cornered the market for low voltage (<100 V) and high switching speed (>100 kHz) applications but failed to make serious inroads in the high voltage arena. This is because the on-state resistance of silicon power MOSFETs increases very rapidly with increase in the breakdown voltage. The resulting high conduction loss, even when using larger more expensive die, degrades the overall system efficiency.The large on-state voltage drop for high voltage silicon power MOSFETs and the large drive current needed for silicon power bipolar transistors encouraged the development of the insulated gate bipolar transistor (IGBT) [1]. First commercialized in the early 1980s, the IGBT has become the dominant device used in all medium and high power electronic systems in the consumer, industrial, transportation, and military systems, and even found applications in the medical sector. The US Department of Energy has estimated that the implementation of IGBT-based variable speed drives for controlling motors is producing an energy savings of over 2 quadrillion btus per year, wh...

Structure Modeling of 100 V Class Super-junction Trench MOSFET with Specific Low On-resistance

“…The ideal specific on-resistance for the drift region in one dimensional devices is computed by using of Baliga's power law [1]. …”

“…At the ideal SJ TMOSFET structure, the specific on-resistance [1] in terms of breakdown voltage is also obtained as…”

“…The specific on-resistance [1] with respect to breakdown voltage at SJ TMOSFET and conventional MOSFET [4] is shown in Fig. 3.…”

“…The critical electric field occurring the breakdown voltage is well known as ×    [1]. It is checked that the minimum width of   is required to have the breakdown voltage of 120 V.…”

A Study on Temperature Dependent Super-junction Power TMOSFET

“…In order to overcome the trade-off, a SJ (superjunction) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) structure [1] is proposed, which has P and N pillars with equal widths,   and   , respectively. The relationship between the doping concentrations and widths of the pillars is as follows.…”