International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International Confe 2020 Help me understand this report
Advanced Process of Deep Anisotropic Etching of Silicon With a High Aspect Ratio for the Formation of TSV Structures
Abstract: The aim of this work was to improve the existing technology of deep anisotropic etching of silicon for its application in the manufacture of three-dimensional TSV structures, namely, to increase the selectivity to the mask and reduce the surface roughness.
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