Advanced processes for low-temperature formation of functional metal oxide based thin films

Abstract

The analysis the discharge processes in magnetron plasma, target sputtering processes, as well as nucleation and formation of oxide thin films during dc magnetron sputtering is carried out. Particular attention is paid to the phenomenon of instabilities of the current-voltage characteristics of magnetron plasma during the sputtering of oxide targets, the processes of structural transformations of the surface of metal oxide targets under ion bombardment impact, and the mechanisms of low-temperature magnetron deposition of metal oxide thin films. Based on the results of the analysis performed the optimal routes for improving technologies for the low-temperature formation of transparent conductive oxide thin films have been discussed.