Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

Cabello, Maria; Soler, V.; Rius, Gemma; Montserrat, J.; Rebollo, J.; Godignon, P.

doi:10.1016/j.mssp.2017.10.030

Cited by 101 publications

(53 citation statements)

References 68 publications

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“…The SiO 2 /4H-SiC interface is characterized by the presence of a relatively high density of interface states D it (> 10 12 eV −1 cm −2 ) close to the conduction band edge. It is widely accepted that the presence of a large amount of interface states D it is detrimental for the field effect mobility µ FE and on-resistance R ON of 4H-SiC MOSFETs [7,16]. According to the studies reported in the last decades, the µ FE can be improved with different passivation processes of the SiO 2 /SiC.…”

Section: Interface States Density and Channel Mobility In 4h-sic Mos-mentioning

confidence: 99%

“…On the other hand, the incorporation of elements of the II and III groups of the periodic table, B [7,44], Ba [45], Ca [60], La [54], Sr [60], has been investigated to explore other possible effects that explain the increase of MOSFET channel mobility. In fact, elements of the II and III groups cannot provide donors in the channel region, similar to the V group elements.…”

Section: Effects Of Counter Doping and Interface Stressmentioning

confidence: 99%

“…Several review papers recently reported on the physical and technological issues which limit the performances and reliability of 4H-SiC MOSFETs in power electronics applications [6][7][8]. In general, 4H-SiC MOSFETs are characterized by a low inversion channel mobility and the occurrence of V th instability phenomena under bias stress [9,10].…”

Section: Introductionmentioning

confidence: 99%

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Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

2019

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This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at the SiO2/SiC interfaces (interface states, channel mobility, trapping phenomena, etc.). First, the most common electrical characterization techniques of SiO2/SiC interfaces are presented (e.g., capacitance- and current-voltage techniques, transient capacitance, and current measurements). Then, examples of electrical characterizations at the nanoscale (by scanning probe microscopy techniques) are given, to get insights on the homogeneity of the SiO2/SiC interface and the local interfacial doping effects occurring upon annealing. The trapping effects occurring in SiO2/4H-SiC MOS systems are elucidated using advanced capacitance and current measurements as a function of time. In particular, these measurements give information on the density (~1011 cm−2) of near interface oxide traps (NIOTs) present inside the SiO2 layer and their position with respect to the interface with SiC (at about 1–2 nm). Finally, it will be shown that a comparison of the electrical data with advanced structural and chemical characterization methods makes it possible to ascribe the NIOTs to the presence of a sub-stoichiometric SiOx layer at the interface.

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Section: Interface States Density and Channel Mobility In 4h-sic Mos-mentioning

confidence: 99%

Section: Effects Of Counter Doping and Interface Stressmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

2019

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“…In case of Si, the inversion channel mobility can be as much as 50% of bulk mobility [29]. In addition to standard N 2 O annealing, there are different types of annealing which can increase the channel mobility significantly, but these annealings degrade some important parameters of a MOSFET and hence cannot be used [44][45][46][47][48][49][50]. More work is still needed in this field to improve the performance of SiC MOSFETs.…”

Section: Oxidation Of Sicmentioning

confidence: 99%

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Sharma¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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“…In recent years SiC metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) have become available on the market while there is still room for improvements. The electron mobility in the conductive channel of a MOSFET is well below the bulk value (μ n ≈ 1000 cm 2 V −1 s −1 ) . Even commercially available state‐of‐the‐art devices are limited in mobility and complex threshold voltage behavior has been reported .…”

Section: Introductionmentioning

confidence: 99%

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO₂ Interface

Gruber

Gspan

Fisslthaler

et al. 2018

Adv Materials Inter

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Understanding the microscopic structure of the SiC/SiO2 interface is crucial for the improvement of SiC based metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). It is well established that interface states degrade the performance and reliability of SiC MOSFETs and that passivation can be achieved by anneals in NO‐containing atmospheres. However, the structural changes associated with the NO anneal and the improvement of the channel electron mobility are still not fully understood. In this study, the SiC/SiO2 interface of the state‐of‐the art 4H‐SiC n‐channel MOSFETs with a deposited oxide is extensively investigated with advanced scanning transmission electron microscopy (STEM) and spatially resolved electron energy‐loss spectroscopy (EELS) methods. The samples are treated with different postoxidation anneals (NO vs O2), resulting in strongly differing mobility and point defect density. The most notable structural difference between the samples is an increased N concentration located in the transition region between the SiC and the SiO2 of the NO‐annealed sample. The N signal is evenly distributed along the whole faceted interface and has a half‐width of wN = (1.8 ± 0.7) nm and an estimated areal density of cN = (4 ± 1) × 1014 cm−2. The observations support the idea that the N incorporation happens predominantly directly at the SiC/SiO2 interface where defect states are passivated.

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Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

Cited by 101 publications

References 68 publications

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO₂ Interface

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Advanced processing for mobility improvement in 4H-SiC MOSFETs: A review

Cited by 101 publications

References 68 publications

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review

Introductory Chapter: Need of SiC Devices in Power Electronics - A Beginning of New Era in Power Industry

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO2 Interface

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Product

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About

Impact of the NO Anneal on the Microscopic Structure and Chemical Composition of the Si‐Face 4H‐SiC/SiO₂ Interface