ABSTRUCTIn mask making, ZEP7000 resist process with MEBES writing tool is widely adopted to produce advanced masks. This time, we tried to improve resist pattern CD uniformity in ZEP process using our special techiiiques. Resist sensitivity uniformity ofniask blank is one of the most significant parameters for resist pattern CD uniformity. In ZEP7000 coating process (coating, pre-baking and cooling), our original cooling method was adopted in consideration of its resist sensitivity properties. Resist filin thickness loss (RTL) uniformity during development was examined in order to analyze the resist sensitivity uniformity within a mask blank. It was clearly seen that resist pattern CD uniformity was related with RTL uniformity. As for our original cooling method, an optimum cooling condition was easily obtained because it had only two parameters. As the results, RTL uniformity was 2.4nm (range), moreover, resist pattern CD uniformity was l5nm (range) with the optimum cooling condition. RTL uniformity and resist pattern CD uniformity were also examined using blanks which were commercially available from two vendors. And these results were compared with the results of our original cooling method. Based on the results ofour study, we confirmed that our original cooling method was very effective for improvement of resist pattern CD uniformity on ZEP process.