Advanced Room Temperature Single-Electron Transistor of a Germanium Nanochain with Two and Multitunnel Junctions

Katkar, Amar S.; Gupta, Shobhnath P.; Granata, C.; Nappi, C.; Prellier, W.; Chen, Lih‐Juann; Walke, Pravin S.

doi:10.1021/acsaelm.0c00242

Cited by 5 publications

(4 citation statements)

References 32 publications

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“…We also confirmed that the circuit can operate at a high temperature for the given parameters. Moreover, research on small-capacitance tunnel junctions is underway, 41,42) and we hope that our circuit will be able to operate at room temperature. Finally, by simulating the proposed circuit with the variation, we showed its potential for practical applications.…”

Section: Discussionmentioning

confidence: 99%

Noise-harnessing single-electron circuit with symmetrical, simple pair circuit structure and application to full adder circuit

Kaide¹,

Oya²

2021

Jpn. J. Appl. Phys.

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We designed a noise-harnessing single-electron (SE) memory (SEM) pair circuit. An SEM consists of a capacitor and a double tunnel junction in series. The SEM pair circuit has two SEMs connected with a coupling capacitor. The circuit has a hysteresis characteristic and a symmetrical structure, and it achieves a substantial noise-harnessing capability by incorporating the stochastic resonance. We also implemented a summing network to improve the circuit performance. To demonstrate its practical application, we designed a full adder with a very simple structure by using only the summed SEM pair circuit. Through Monte Carlo computer simulation, we confirmed that the full adder operates correctly under a high-temperature condition. Moreover, our circuit can also operate with variations in capacitance caused by manufacturing processes. These results indicate that our SEM pair circuit, which operates by overcoming the disadvantages of SE circuits, has numerous practical applications as a useful, functional nanodevice.

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Section: Discussionmentioning

confidence: 99%

Noise-harnessing single-electron circuit with symmetrical, simple pair circuit structure and application to full adder circuit

Kaide¹,

Oya²

2021

Jpn. J. Appl. Phys.

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“…Implementation of multiple‐tunnel junctions (MTJs), [ 196 ] that is, formed by a chain of nanoscale islands linked with tunnel junctions, is another promising means of increasing the charging energy for room temperature operation. A promising example of this approach has been recently demonstrated by the realization of robust and well‐controlled MTJ architectures of germanium nanoparticles rooted by a germanium oxide ropeway.…”

Section: From Sketches To Real Systemsmentioning

confidence: 99%

Chirality‐Induced Spin Selectivity: An Enabling Technology for Quantum Applications

et al. 2023

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Molecular spins are promising building blocks of future quantum technologies thanks to the unparalleled flexibility provided by chemistry, which allows the design of complex structures targeted for specific applications. However, their weak interaction with external stimuli makes it difficult to access their state at the single‐molecule level, a fundamental tool for their use, for example, in quantum computing and sensing. Here, an innovative solution exploiting the interplay between chirality and magnetism using the chirality‐induced spin selectivity effect on electron transfer processes is foreseen. It is envisioned to use a spin‐to‐charge conversion mechanism that can be realized by connecting a molecular spin qubit to a dyad where an electron donor and an electron acceptor are linked by a chiral bridge. By numerical simulations based on realistic parameters, it is shown that the chirality‐induced spin selectivity effect could enable initialization, manipulation, and single‐spin readout of molecular qubits and qudits even at relatively high temperatures.

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“…Experimental SETs for MVL applications have been mostly based on Si due to the availability of reproducible fabrication methods and have often been implemented in combination with conventional FETs to reduce operational instabilities. Despite all the challenges, SETs are being actively developed and remain a promising MVL technology; for instance, decent performance has recently been exhibited by SETs based on mixed‐dimensional Al/MoS 2 heterostructures, [ 106 ] nanochains of Ge nanoparticles, [ 107 ] Au nanoparticles, [ 95 ] ellipsoidal Si single QDs, [ 108 ] etc.…”

Section: Mvl Devices Based On Design Of Transfer Id–vg Characteristicsmentioning

confidence: 99%

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

et al. 2022

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Figure 8. Single-electron transistors (SETs). a) Schematic structure and b) transfer I-V characteristic of a typical SET. c) Schematic diagram and scanning electron microscopy image of the two-gate SET. d) Transfer I-V characteristic of the two-gate SET at V in2 = 0 V and 0.2 V. c,d) Reproduced with permission. [18] Copyright 2000, IEEE. e) Circuit diagram of the universal literal gate and its periodic V in −V out characteristic. Reproduced with permission. [98] Copyright 2003, IEEE. f) Schematic of the two-input hybrid MOSFET-SET device. g) The output voltage as a function of two input gate voltages. f,g) Adapted with permission. [103] Copyright 2009, IEEE. h,i) Schematic diagram of the Si EQD SET (h) and its typical two-peak transfer characteristic (i). j) Contour plot demonstrating I D as a function of V DS and V G enabling ternary and quaternary operation regimes. h-j) Reproduced with permission. [105]

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Advanced Room Temperature Single-Electron Transistor of a Germanium Nanochain with Two and Multitunnel Junctions

Cited by 5 publications

References 32 publications

Noise-harnessing single-electron circuit with symmetrical, simple pair circuit structure and application to full adder circuit

Noise-harnessing single-electron circuit with symmetrical, simple pair circuit structure and application to full adder circuit

Chirality‐Induced Spin Selectivity: An Enabling Technology for Quantum Applications

Looking Beyond 0 and 1: Principles and Technology of Multi‐Valued Logic Devices

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