2014 IEEE 26th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD) 2014
DOI: 10.1109/ispsd.2014.6856040
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Advanced SOI gate driver IC with integrated VCE-monitoring and negative turn-off gate voltage for medium power IGBT modules

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Cited by 8 publications
(2 citation statements)
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“…This may be due to the high cost of the devices and anticipation of the highcurrent switching devices yet to come on the market. An Intelligent Power Module has been developed to protect IGBTs from short circuit and to provide a negative voltage to avoid false switching signals, which reduces switching losses [44]. Furthermore, to obtain closed-loop gate control, a new technique has been proposed in [45].…”
Section: Componentsmentioning
confidence: 99%
“…This may be due to the high cost of the devices and anticipation of the highcurrent switching devices yet to come on the market. An Intelligent Power Module has been developed to protect IGBTs from short circuit and to provide a negative voltage to avoid false switching signals, which reduces switching losses [44]. Furthermore, to obtain closed-loop gate control, a new technique has been proposed in [45].…”
Section: Componentsmentioning
confidence: 99%
“…Unfortunately, there are still two weaknesses of the conventional bipolar gate drive circuits. First, the conventional bipolar gate drive circuits [15,16] need two power supplies and it is difficult to implement in an integrated circuit, especially with the bulk-silicon technology [17]. Second, the overshoot voltage V OV of the IGBTs is deteriorated due to that the collector current rate dI CE /dt is increased rapidly, which is harmful for the devices and the system reliability [18][19][20][21][22].…”
Section: Introductionmentioning
confidence: 99%