2014 19th Asia and South Pacific Design Automation Conference (ASP-DAC) 2014
DOI: 10.1109/aspdac.2014.6742951
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Advanced technologies for brain-inspired computing

Abstract: This paper aims at presenting how new technologies can overcome classical implementation issues of Neural Networks. Resistive memories such as Phase Change Memories and Conductive-Bridge RAM can be used for obtaining low-area synapses thanks to programmable resistance also called Memristors. Similarly, the high capacitance of Through Silicon Vias can be used to greatly improve analog neurons and reduce their area. The very same devices can also be used for improving connectivity of Neural Networks as demonstra… Show more

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Cited by 17 publications
(5 citation statements)
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“…The applications of resistive crossbar arrays in acceleration of scientific and neuromorphic computing have been studied [13,14]. For example, memristor crossbar was used to implement matrix-vector computation [15].…”
Section: Introductionmentioning
confidence: 99%
“…The applications of resistive crossbar arrays in acceleration of scientific and neuromorphic computing have been studied [13,14]. For example, memristor crossbar was used to implement matrix-vector computation [15].…”
Section: Introductionmentioning
confidence: 99%
“…As a result, the atomic switch's behaviour can be controlled by the material choice, which is likely to vary on the application. CBRAM has been implemented using GeS₂/Ag [44][45][46][47][48][49][50], HfO₂/GeS₂ [51], Cu/Ti/Al₂O₃ [52], Ag/Ge₀.₃Se₀.₇ [53][54][55], Ag₂S [56][57][58] and Cu/SiO₂ [54]. Similar to atomic switches, the material chosen affects the stability and dependability of the device as well as the switching behaviour of CBRAM devices, Memristors can be used in a wide number of ways.…”
Section: Materials and Devicesmentioning
confidence: 99%
“…As such, the selection of the appropriate material can govern how the atomic switch will behave and will likely be application-dependent. CBRAM has been implemented using GeS 2 /Ag [299], [457], [1027], [1384], [1439], [2066], [2068], HfO 2 /GeS 2 [2067], Cu/Ti/Al 2 O 3 [2070], Ag/Ge 0.3 Se 0.7 [1408], [2069], [2198], Ag 2 S [2199]- [2201] and Cu/SiO 2 [2069]. Similar to atomic switches, the switching behavior of CBRAM devices is also dependent upon the material selected; the stability and reliability of the device is also dependent upon the material chosen.…”
Section: Materials For Neuromorphic Systemsmentioning
confidence: 99%
“…It has also been utilized to stack neuromorphic chips. Through silicon vias (TSVs) are commonly used to physically implement 3D integration approaches for neuromorphic systems [1058], [2066], [2385]- [2387], partially because utilizing TSVs in neuromorphic systems help mitigate some of the issues that arise with using TSVs, such as parasitic capacitance [2388]; however, other technologies have also been utilized in 3D integration, such as microbumps [2389]. 3D integration is commonly used in neuromorphic systems with a variety of other technologies, such as memristors [866], [2390]- [2393], phase change memory [2093], and CMOS-molecular (CMOL) systems [2394].…”
Section: A Communicationmentioning
confidence: 99%