Advanced thin wafer IGBTs with new thermal management solution

Otsuki, M.; Kanemaru, H.; Ikeda, Yoshinari; Ueno, Katsunori; Kirisawa, M.; Onozawa, Yuichi; Seki, Y.

doi:10.1109/ispsd.2003.1225250

Cited by 8 publications

(2 citation statements)

References 2 publications

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“…The IGBT module is required to be low thermal resistance, high power handling capability, high temperature operation and high reliability [1]. A novel chip surface interconnection structure promising for fulfilling these requirements has been proposed to be a copper lead-frame structure having a cooling effect of chip temperature instead of aluminum wires [2]. In ISPSD2003, we have demonstrated that the lead-frame interconnection keeps lower the chip temperature compared with an aluminum wire interconnection and also effective for the short circuit capability.…”

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confidence: 99%

A study on the reliability of the chip surface solder joint

Ikeda

Iizuka

Asai

et al. 2008

2008 20th International Symposium on Power Semiconductor Devices and IC's

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The solder joint reliability of IGBT chip surface interconnection with a lead-frame structure is described in the power cycling (P/C) capability which is greatly improved due to a chip surface cooling effect in comparison with aluminum wire interconnection. The lead-frame is joined on a Ni and Au plated chip surface with Sn-Ag or Sn-Sb system solders. The P/C capability obtained with the Sn-Sb system solder is three times larger than that with the Sn-Ag system solder. Such a good performance comes from the solid solution hardening property of Sn-Sb system solder.

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mentioning

confidence: 99%

A study on the reliability of the chip surface solder joint

Ikeda

Iizuka

Asai

et al. 2008

2008 20th International Symposium on Power Semiconductor Devices and IC's

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“…This "area bonding" technique makes 3-dimensional cooling possible, and the front metal bus bar could be counted as the heat-spreader. On the other hands, to expand the Short-Circuit SOA (SCSOA) capability in the higher temperature operation, power devices' thermal management technique is reported [3]. The lead-frame structure is proposed and 34% increase in the critical short-circuit energy was confirmed.…”

Section: Introductionmentioning

confidence: 98%

Direct Beam Lead Bonding for Trench MOSFET &amp; CSTBT

Narazaki

Shirasawa

Takayama³

et al.

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005.

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The next innovation in the power modules has come up with the corroboration between the power chip technology like CSTBT and the packaging technology like the direct transfer mold module, via wireless bonding technology, that is our technology "Direct Beam Lead Bonding (DBLB)". In this paper, we report the electrical characteristics and the reliabilities of a MOSFET and a CSTBT using DBLB. The DBLB type MOSFET's on-state resistance (R DS(ON) ) can be reduced in 16% comparing with the conventional aluminum (Al) wire bonding type and an avalanche ruggedness (E AVA ) during unclamped inductive switching (UIS) is improved approximately 2 times. It has the excellent reliability under the thermal cycling test between 233K and 398K during over 3000cycles. Further, the DBLB type CSTBT has, under the Short Circuit Safety Operation Area (SCSOA) test condition, 11% greater toughness as energy than the Al wiring type.

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