Advanced Wet Clean Technology at Lightly Doped Drain Layers in FinFET

Abstract

An advanced wet clean method to utilize piezoelectric nozzle head for fine-controlled dual-fluid sprays based on single wafer clean toolset was demonstrated on FinFET production wafers that surface particles were reduced by as much as 26% without sacrifice of gate pattern damage in sensitive lightly doped drain layers. Additionally, about 5% yield improvement was observed for using the new clean method. The fine-controlled dual-fluid sprays improved the cleaning efficiency significantly in the "physicochemical" way and reduced the potential for pattern damage caused by variations in liquid droplet size and velocity.

Mechanism Analysis of Nanoparticle Removal Induced by the Marangoni-driven Flow in Post-CMP Cleaning

“…The controlling of contaminants and defects is increasingly strict with the development of chip technology node, leading to a huge challenge in ultraclean surface preparation. 1 The cleaning process following Chemical Mechanical Polishing (CMP) 2 is of significant difficulty owing to the considerable variety of contaminants from the employed slurry. 3 To realize the effective removal of contaminants, the methods of Megasonics 4 and Brush 5 coupled with chemical action have been employed in the post CMP cleaning.…”