Advanced wiring RC delay issues for sub-0.25-micron generation CMOS

Stamper, A. K.; Fuselier, M.; Tian, Xiong

doi:10.1109/iitc.1998.704752

Cited by 15 publications

(4 citation statements)

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“…With the decrease in feature size, the signal propagation delay caused by the interconnects (resistance-capacitance [RC] delay) has become a significant issue for device performance. 1,2) In order to reduce RC delay, Cu has received considerable attention because of its low electrical resistance (1.7 mÁcm for bulk). Besides, Cu is expected to have superior electromigration (EM) resistance because of its higher melting point and subsequently lower effective atomic diffusivity than Al at the same temperature.…”

mentioning

confidence: 99%

Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization

Zhao¹,

Kim²,

Shimogaki³

2005

Jpn. J. Appl. Phys.

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Doping Cu with some elements has been proved to be a promising method to improve the reliability of Cu interconnects. In this paper, Ag was chosen as the alloying element because of its low bulk resistivity and low solubility in Cu. Cu–Ag alloy film was prepared by layered evaporation and postdeposition annealing in vacuum. The resistivity of the films decreased with annealing temperature. After annealing at 400°C, most of the Ag atoms were segregated to the film surface because Cu–Ag system had a negative segregation energy. By comparing the texture evolution of pure Cu film and Cu–Ag films during annealing, it was found that Ag addition usually retarded the texture development of the alloy film. Vacuum annealing resulted in a rougher surface for the Cu–Ag films. The investigation of alloying effect on Cu agglomeration on TaN substrate suggested that Ag addition might impair the Cu wettability on TaN substrate. Possible methods for improving the surface morphology of Cu alloy were also proposed.

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confidence: 99%

Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization

Zhao¹,

Kim²,

Shimogaki³

2005

Jpn. J. Appl. Phys.

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“…With the development of integrated circuits, silicon wafer products are being developed in the direction of thinner line widths. , Cobalt (Co) was chosen as a candidate material to replace copper in the M1 and M2 layers due to its lower resistivity at low line widths and higher melting point relative to copper. − Meanwhile, Co interconnects can provide the possibility for seamless filling, thereby enhancing the reliability of devices …”

Section: Introductionmentioning

confidence: 99%

Experimental and Computational Studies on Octyl Hydroxamic Acid as an Environmentally Friendly Inhibitor of Cobalt Chemical Mechanical Polishing

Wang

Cao

et al. 2022

ACS Appl. Mater. Interfaces

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Octyl hydroxamic acid (OHA) was investigated as an inhibitor in H2O2-based alkaline silica dispersions for the polishing of cobalt (Co) films for interconnect applications. A combination of experiments and density functional theory (DFT) was used to investigate the inhibition effect and the mechanism of OHA on the Co surface. On the basis of the experiments, it can be proven that OHA has an inhibition effect on Co, which came from the inhibition of the cathodic reaction. The X-ray photoelectron spectroscopy (XPS) experiments show that the adsorption of OHA weakened the oxidation of the Co surface and protected the Co surface from corrosion. On the basis of the calculations, it can be proven that the OHAketone (ion) is most likely to react with the Co surface, and it can adsorb on the Co surface by Co–O bonds. This study provides important microscopic insights for understanding the corrosion protection of Co interconnect metals and helps to explain the corrosion inhibition mechanism of the organic–metal interface during the CMP process.

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“…Ever since the development of the integrated circuit (IC) about 60 years ago, aluminum (Al) and silicon dioxide (SiO 2 ) have been most widely used as conductor and insulator materials for the fabrication of micro-processors [1,2]. As technical demands grew, the continuous decrease of the feature sizes and the explosive increase of the number of transistors in micro-processors resulted in the growth of so-called gate delays [3,4]. To solve this issue, new wiring materials with resistivity lower than Al and dielectric materials with dielectric constant (so-called low-κ) lower than conventional SiO 2 have to be used as alternatives.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Barrier Layer of Cu Interconnects

Tian

Teng

et al. 2020

Materials

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The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

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Advanced wiring RC delay issues for sub-0.25-micron generation CMOS

Cited by 15 publications

References 1 publication

Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization

Effects of Ag Addition on the Resistivity, Texture and Surface Morphology of Cu Metallization

Experimental and Computational Studies on Octyl Hydroxamic Acid as an Environmentally Friendly Inhibitor of Cobalt Chemical Mechanical Polishing

Recent Advances in Barrier Layer of Cu Interconnects

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