Advancement in the MOVPE technology to increase the process yield and expand the band gap engineering possibilities

Timò, Gianluca; Armani, N.; Abagnale, Giovanni; Schineller, B.

doi:10.1109/pvsc.2014.6924981

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…In similar way, III-V compounds have been grown and characterized after SiGeSn growth. It is worth mentioning that a preliminary study of the "cross contamination" was already reported considering the growth of a InGaP/InGaAs/SiGe/Ge TJ structure [18]. This study was limited to measure the contamination of IV elements in III-V after SiGe deposition.…”

Section: Resultsmentioning

confidence: 99%

MOVPE SiGeSn development for the next generation four junction solar cells

Timò¹,

Abagnale²,

Armani³

et al. 2018

AIP Conference Proceedings

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The Multijunction (MJ) monolithic approach is very attractive for a competitive concentrating photovoltaic (CPV) technology; it has been successfully applied for InGaP/GaInAs/Ge triple-junction structures but it is more difficult to be exploited for manufacturing 4-junction solar cells, in particular when III-V and IV elements are both used. So far, the integration of the 1 eV SiGeSn material in the lattice-matched InGaP/GaInAs/Ge triple-junction structure has required the utilization of two different growth apparatus, nearly losing the economic advantage of the monolithic architecture, owing to the related higher capital expenditure. The central technical challenge for realizing InGaP/GaInAs/SiGeSn/Ge solar cell at low cost, with an industrial approach, lies in the growth of III-V and IV elements in the same MOVPE equipment, by solving the "cross contamination" problem among the III-V elements and the IV elements. In this contribution, for the first time, the results of the investigation concerning the growth of SiGe(Sn) and III-V compounds in the same MOVPE growth chamber are presented. The epitaxial layers have been characterized by XRD, SEM, TEM, EDX, SIMS and ECV profiling. It is eventually shown that by starting from a modification of the MOVPE equipment and by setting up proper growth condition the contamination of III-V elements in IV based materials can be drastically reduced from 10 20 cm-3 to 2*10 17 cm-3 , while the contamination of IV elements in III-V compounds can be reduced from 4-5*10 17 cm-3 to 6*10 16-3*10 14 cm-3 depending on the substrate used.

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Section: Resultsmentioning

confidence: 99%

MOVPE SiGeSn development for the next generation four junction solar cells

Timò¹,

Abagnale²,

Armani³

et al. 2018

AIP Conference Proceedings

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“…There is considerable interest in exploiting band gap engineering possibilities offered by the integration of III-V and IV-based materials for optoelectronic and more specifically for photovoltaic applications [ 1 , 2 , 3 ]. A successful integration of InGaP and Si has already been accomplished in the realization of dual junction solar cells by mechanical staking the different semiconductors [ 4 ].…”

Section: Introductionmentioning

confidence: 99%

Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

Timò¹,

Calicchio²,

Abagnale³

et al. 2021

Materials

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We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is shown that by adopting an innovative design of the MOVPE growth chamber and proper growth condition, the IV elements growth rate penalization due to As “carry over” can be eliminated and the background doping level in both IV and III-V semiconductors can be drastically reduced. In the temperature range 748–888 K, Ge and SiGe morphologies do not degrade when the semiconductors are grown in a III-V-contaminated MOVPE growth chamber. Critical morphology aspects have been identified for SiGeSn and III-Vs, when the MOVPE deposition takes place, respectively, in a As or Sn-contaminated MOVPE growth chamber. III-Vs morphologies are influenced by substrate type and orientation. The results are promising in view of the monolithic integration of group-IV with III-V compounds in multi-junction solar cells.

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Advancement in the MOVPE technology to increase the process yield and expand the band gap engineering possibilities

Cited by 2 publications

References 7 publications

MOVPE SiGeSn development for the next generation four junction solar cells

MOVPE SiGeSn development for the next generation four junction solar cells

Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

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