Advances in Bonding Technology for Electronic Packaging

Lee, Chin C.; Wang, Chen Y.; Matijasevic, G.

doi:10.1115/1.2909318

Cited by 50 publications

(16 citation statements)

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“…Soft solder die attach is a common method to bond power semiconductor devices on leadframes [44,45]. An automatic soft solder die bonder attaches thousands of chips per hour.…”

Section: Process Considerationsmentioning

confidence: 99%

Microelectronic Bonding Processes Monitored by Integrated Sensors

Mayer¹,

Schwizer

2002

Sensors Update

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Real-time monitoring methods are beneficial for the control, optimization, and failure analysis of microelectronic packaging processes. The focus of this chapter is on the real-time monitoring of two widely used processes, soft solder die bonding and thermosonic ball bonding. The methods presented here use uniquely developed microsensors integrated on custom-made test chips using commercial double-metal CMOS processes.For the soft solder die bonding process, nine aluminum-based resistive temperature detectors were integrated on various locations on a test chip. The temperature was monitored during the placement of the test chip on the leadframe. The experimental results describe the wetting and spreading effects of the molten solder under the drip. Together with numerical results obtained with a transient thermal finite element model, the beginning of wetting can be quantified. For the soft solder PbSn10, wetting occurred around 30 ms after touch down. This method hence can be used to determine wetting times under different process conditions. The wetting time determines an upper limit of the throughput of the process.For the thermosonic ball bonding process, temperature and force sensors were integrated on test chips. The sensors are aluminum resistors and piezoresistive p + -and n + -diffused resistors placed around bond pads. A bond quality parameter can be derived from the temperature signal variation during bonding. The piezoresistive sensors permit the measurement of forces in the x-, y-, and z-directions simultaneously. The ultrasonic tangential force signal reached a typical value of 0.12 N on a 50 lm diameter contact zone and revealed significant process characteristics. Four process phases are identified which are necessary for a successful ball bond formation. These phases are assigned to initial stiction, sliding, bond growth, and deformation effects.

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“…Soft solder die attach is a common method to bond power semiconductor devices on leadframes [44,45]. An automatic soft solder die bonder attaches thousands of chips per hour.…”

Section: Process Considerationsmentioning

confidence: 99%

Microelectronic Bonding Processes Monitored by Integrated Sensors

Mayer¹,

Schwizer

2002

Sensors Update

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“…7,8) In electronic packaging application, indium solders are selectively used in where their unique properties are essential, for example flip chip interconnections of Josephson devices, glass-sealing alloys of 52In-42Sn, cryogenic solders for thin film joining, thermally conductive die attachment in a multichip module, and Pb-In alloys for controlled collapse chip connection (C4) application. [9][10][11] During soldering, the solder alloy melts and reacts with the substrate to form intermetallic compounds at the joining interface. The intermetallic layers increase in thickness with time in a thermally activated manner.…”

Section: Introductionmentioning

confidence: 99%

Reaction Diffusion and Formation of Cu11In9 and In27Ni10 Phases in the Couple of Indium-Substrates

et al. 2003

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The reaction diffusion between indium solder and Au deposited (Ni and Cu) substrates was investigated. For the identification of intermetallic compounds, both Scanning Electron Microscopy (SEM) and X-Ray Diffractometry (XRD) were employed. Experimental results showed that the intermetallic compounds, such as Cu 11 In 9 and In 27 Ni 10 , were observed for different substrates, respectively. Additionally, the growth rate of these intermetallic compounds was increased with the reaction temperature and time. We found that the growth of the intermetallic compound follows the parabolic law, which indicates that layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range. The apparent activation energies for intermetallic compound growth were 37.06 kJ/mol for Cu 11 In 9 and 86.14 kJ/mol for In 27 Ni 10 , respectively.

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“…[1][2][3][4][5][6] Indium has been widely used as an alloying element for many low-temperature solders and fusible alloys, because of its low melting point, extreme softness, ductility, and excellent wetting characteristics. 7,8 In electronic packaging applications, indium solders are selectively used where their unique properties are essential, for example, flip-chip interconnections of Josephson devices, glass-sealing alloys of 52In-42Sn, cryogenic solders for thin film joining, thermally conductive die attachment in a multichip module, and Pb-In alloys for controlled collapse chip connection (C4) application. [9][10][11] During soldering, the solder alloy melts and reacts with the substrate to form intermetallic compounds (IMCs) at the joining interface.…”

Section: Introductionmentioning

confidence: 99%

The effect of isothermal aging on the thickness of intermetallic compound layer growth between low melting point solders and Ni-plated Cu substrate

Kim

Jung

2004

Journal of Elec Materi

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The growth kinetics of the intermetallic compound (IMC) layer formed between two low melting point solders and electrolytic Ni/Cu substrate by solid-state isothermal aging were examined. The solders were 100 In and In-48Sn. A quantitative analysis of the IMC layer thickness as a function of aging time and aging temperature was performed. Experimental results showed that the IMCs, such as In 27 Ni 10 and Ni 3 (In, Sn) 4 , were observed for different solders. Additionally, the growth rate of these IMCs increased with the aging temperature and time. The layer growth of the IMC in the couples of indium solder alloy/electrolytic Ni system satisfied the parabolic law at a given temperature range. As a whole, because the values of the time exponent (n) are approximately 0.5, the layer growth of the IMC was mainly controlled by the diffusion mechanism over the temperature range studied. The apparent activation energies for IMC growth were 60.03 kJ/mol for In 27 Ni 10 and 72.84 kJ/mol for Ni 3 (In, Sn) 4 .

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Advances in Bonding Technology for Electronic Packaging

Cited by 50 publications

References 0 publications

Microelectronic Bonding Processes Monitored by Integrated Sensors

Microelectronic Bonding Processes Monitored by Integrated Sensors

Reaction Diffusion and Formation of Cu<SUB>11</SUB>In<SUB>9</SUB> and In<SUB>27</SUB>Ni<SUB>10</SUB> Phases in the Couple of Indium-Substrates

The effect of isothermal aging on the thickness of intermetallic compound layer growth between low melting point solders and Ni-plated Cu substrate

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