2007
DOI: 10.1117/12.713353
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Advances in CD-AFM scan algorithm technology enable improved CD metrology

Abstract: Improving device performance and yield is one of the primary goals of microelectronic research and development. In order to attain this goal, process engineers are focusing on the integration of new materials and the development of new device architectures. For production process control, the two main techniques to monitor device dimensions are CD-SEM and Scatterometry. Despite the excellent repeatability of these techniques, SEM and Scatterometry often suffer from unacceptably large measurement uncertainty, p… Show more

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Cited by 18 publications
(6 citation statements)
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“…The resist patterns are exposed to trimming process using O 2 plasma chemistry with the following plasma conditions: gas flow: 200 sccm/source power: 250 W/pressure: 10 mTorr and bias power: 0W. 3D CD-AFM 38,39,40 from Veeco Instrument is used to reconstruct the resist profiles in three dimensions before and after increasing HBr/O 2 plasma processing times (cf. Fig.4), as well as to measure sidewall roughness parameters (rms, ξ , α, respectively in Fig.5a,b, c).…”
Section: Resultsmentioning
confidence: 99%
“…The resist patterns are exposed to trimming process using O 2 plasma chemistry with the following plasma conditions: gas flow: 200 sccm/source power: 250 W/pressure: 10 mTorr and bias power: 0W. 3D CD-AFM 38,39,40 from Veeco Instrument is used to reconstruct the resist profiles in three dimensions before and after increasing HBr/O 2 plasma processing times (cf. Fig.4), as well as to measure sidewall roughness parameters (rms, ξ , α, respectively in Fig.5a,b, c).…”
Section: Resultsmentioning
confidence: 99%
“…The CDAFM technique (Insight 3D AFM from Veeco Instrument) is used to reconstruct the resist pattern profiles and to measure the LWR along the pattern height 20, 21. The AFM tips (CDR120C from Veeco instrument) used in this study have a diameter of about 120 nm, an edge radius of 10 nm, and a lateral stiffness of 4 N · m −1 .…”
Section: Methodsmentioning
confidence: 99%
“…Novel tip control techniques and scanning modes are required to deal with this issue. In addition, in case of a sharp bottomed corner, the scan transition from the flat to the vertical surface causes notching at the sidewall base, this can be controlled using a slow scan speed and the implementation of fast dither tube actuation (FDTA, detailed in section 3.2.1) has enabled notching control [77].…”
Section: Tip-sample Interaction and Feedback Controlmentioning
confidence: 99%
“…Due to the FDTA implementation RMS noise amplitude on the sidewalls has reduced from 1.5 nm 3σ without FDTA to 0.5 nm 3σ with FDTA. In addition, due to high bandwidth control an increase in the overall scanning speed has been reported [77].…”
Section: Critical Dimension Atomic Force Microscope (Cd-afm)mentioning
confidence: 99%