Advances in crystal growth and characterizations of gallium orthophosphate, GaPO4

Yot, Pascal G.; Cambon, O.; Balitsky, Denis; Goiffon, A.; Philippot, E.; Capelle, B.; Détaint, J.

doi:10.1016/s0022-0248(01)01013-2

Cited by 31 publications

(33 citation statements)

References 11 publications

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“…Moreover, GaPO 4 was a very promising material with high expected piezoelectric properties. Different solvents were used: H 3 PO 4 , H 2 SO 4 , and mixtures have been the most studied [71][72][73][74][75][76][77][78]. As for AlPO 4 , the solubility of GaPO 4 is the reverse below 673 K. A seed lengthening process has been developed by splicing [79].…”

Section: Gapo 4 Single Crystalsmentioning

confidence: 99%

Hydrothermal Crystal Growth of Piezoelectric α-Quartz Phase of AO2 (A = Ge, Si) and MXO4 (M = Al, Ga, Fe and X = P, As): A Historical Overview

Cambon

Haines

2017

Crystals

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Abstract:Quartz is the most frequently used piezoelectric material. Single crystals are industrially grown by the hydrothermal route under super-critical conditions (150 MPa-623 K). This paper is an overview of the hydrothermal crystal growth of the AO 2 and MXO 4 α-quartz isotypes. All of the studies on the crystal growth of this family of materials enable some general and schematic conclusions to be made concerning the influence of different parameters for growing these α-quartz-type materials with different chemical compositions. The solubility of the material is the main parameter, which governs both thermodynamic parameters, P and T, of the crystal growth. Then, depending on the chemistry of the α-quartz-type phase, different parameters have to be considered with the aim of obtaining the basic building units (BBU) of the crystals in solution responsible for the growth of the α-quartz-type phase. A schematic method is proposed, based on the main parameter governing the crystal growth of the α-quartz phase. All of the crystal growth processes have been classified according to four routes: classical, solute-induced, seed-induced and solvent-induced crystal growth.

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Section: Gapo 4 Single Crystalsmentioning

confidence: 99%

Hydrothermal Crystal Growth of Piezoelectric α-Quartz Phase of AO2 (A = Ge, Si) and MXO4 (M = Al, Ga, Fe and X = P, As): A Historical Overview

Cambon

Haines

2017

Crystals

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“…The OH contamination of the crystalline lattice during crystallization via growth medium, which decreases the Q-factor of the resonators, has been largely reported in the literature concerning α-GaPO 4 grown by the hydrothermal method [43,52,53,55,57,68,71,99,100].…”

Section: Flux-grown α-Gapomentioning

confidence: 99%

“…In a typical room temperature non-polarized infrared transmission spectrum of an α-GaPO 4 material containing significant OH-groups, a broad and intense band between 2500 and 3600 cm −1 is observed (O-H infrared region) associated with H-bonded molecular water. This broad band is superimposed upon three well-separated peaks at 3167, 3290 and 3400 cm −1 and sometimes upon a sharp absorption band at 3508 cm −1 related to an isolated OH-group stretching band [43,55,65,68]. The amplitude of the peak centered around 3400 cm −1 is attributed in one part to the absorption by the GaPO 4 lattice and in another part to O-H stretching vibrations [65].…”

Section: Flux-grown α-Gapomentioning

confidence: 99%

“…This high temperature allotropic transition does not permit the growth of α-GaPO 4 crystals by conventional melt techniques. Single crystals of α-GaPO 4 were grown using epitaxial hydrothermal-based methods in a retrograde-solubility range at T < 250 °C and in the range of direct temperature dependence of solubility at T > 300 °C from highly corrosive acid solutions [40,43,[47][48][49][50][51][52][53][54][55][56][57][58][59][60][61][62]. However, for gallium orthophosphate material, it seems quite difficult to obtain very high quality crystals with these solution-based growth methods.…”

Section: Introductionmentioning

confidence: 99%

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Flux-Grown Piezoelectric Materials: Application to α-Quartz Analogues

et al. 2014

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Using the slow-cooling method in selected MoO 3 -based fluxes, single-crystals of GeO 2 and GaPO 4 materials with an α-quartz-like structure were grown at high temperatures (T ≥ 950 °C). These piezoelectric materials were obtained in millimeter-size as well-faceted, visually colorless and transparent crystals. Compared to crystals grown by hydrothermal methods, infrared and Raman measurements revealed flux-grown samples without significant hydroxyl group contamination and thermal analyses demonstrated a total reversibility of the α-quartz ↔ β-cristobalite phase transition for GaPO 4 and an absence of phase transition before melting for α-GeO 2 . The elastic constants C IJ (with I, J indices from 1 to 6) of these flux-grown piezoelectric crystals were experimentally determined at room and high temperatures. The ambient results for as-grown α-GaPO 4 were in good agreement with those obtained from hydrothermally-grown samples and the two longitudinal elastic constants measured versus temperature up to 850 °C showed a monotonous evolution. The extraction of the ambient piezoelectric stress contribution e 11 from the C D 11 to C E 11 difference gave for the piezoelectric strain coefficient d 11 of flux-grown α-GeO 2 crystal a value of 5.7(2) pC/N, which is more than twice that of α-quartz. As the α-quartz structure of GeO 2 remained stable up to melting, a piezoelectric activity was observed up to 1000 °C.

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“…This material exhibits better piezoelectric characteristics: higher coupling coefficient for its temperature compensated cut and wider thermal stability than quartz single crystals [1]. The high temperature of the allotropic transition a-quartz -b-cristobalite at 933 1C does not permit the growth of a-GaPO 4 single crystals by conventional melt techniques.…”

Section: Introductionmentioning

confidence: 99%