2014 IEEE Industry Application Society Annual Meeting 2014
DOI: 10.1109/ias.2014.6978355
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Advances in electric charge measurements in semi-conducting structures by non-destructive thermal methods

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“…In Ref. 35 a metal-oxide-semiconductor (MOS) structure with thickness of several hundreds of nanometers was tested. The TPM has been recently adapted by Mellinger and Aryal for both 2D 36 and 3D measurements.…”
Section: A the Thermal Pulse Methodsmentioning
confidence: 99%
“…In Ref. 35 a metal-oxide-semiconductor (MOS) structure with thickness of several hundreds of nanometers was tested. The TPM has been recently adapted by Mellinger and Aryal for both 2D 36 and 3D measurements.…”
Section: A the Thermal Pulse Methodsmentioning
confidence: 99%