Advances in Emerging Photonic Memristive and Memristive‐Like Devices

Abstract

Possessing the merits of high efficiency, low consumption, and versatility, emerging photonic memristive and memristive-like devices exhibit an attractive future in constructing novel neuromorphic computing and miniaturized bionic electronic system. Recently, the potential of various emerging materials and structures for photonic memristive and memristive-like devices has attracted tremendous research efforts, generating various novel theories, mechanisms, and applications. Limited by the ambiguity of the mechanism and the reliability of the material, the development and commercialization of such devices are still rare and in their infancy. Therefore, a detailed and systematic review of photonic memristive and memristive-like devices is needed to further promote its development. In this review, the resistive switching mechanisms of photonic memristive and memristive-like devices are first elaborated. Then, a systematic investigation of the active materials, which induce a pivotal influence in the overall performance of photonic memristive and memristive-like devices, is highlighted and evaluated in various indicators. Finally, the recent advanced applications are summarized and discussed. In a word, it is believed that this review provides an extensive impact on many fields of photonic memristive and memristive-like devices, and lay a foundation for academic research and commercial applications.

Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception Applications

“…In this case, the optical information can be stored in the Cu/HfO x /BP/Pt memristive synaptic device because of that the light intensity defines the amount of photogenerated charge carriers, which is generally related to the possibility of charge trapping at the HfO x /BP interface. [48][49][50][51][52] Therefore, tuning the light intensity provides an approach to achieve multilevel resistance states in the Cu/HfO x /BP/Pt device. Furthermore, light stimulation with various intensities correspond to different optical excitation energies and different amount of light absorption within the HfO x /BP interface, which may also induce to different charge trapping/detrapping and multiple resistance states.…”

Tin Oxide Nanorod Array-Based Photonic Memristors with Multilevel Resistance States Driven by Optoelectronic Stimuli

“…As seen in UV–visible absorption spectra, 254 nm light is strongly absorbed by SnO x nanorods. When the device is illuminated with 254 nm light, there is a possibility of the occurrence of both adsorption and desorption of oxygen ions at the conductive pathways . The photo-induced electron–hole pairs could also be excited and separated in these SnO x nanorods.…”

“…When the device is illuminated with 254 nm light, there is a possibility of the occurrence of both adsorption and desorption of oxygen ions at the conductive pathways. 44 The photoinduced electron−hole pairs could also be excited and separated in these SnO x nanorods. These processes might lead to a change in the charge carrier density and thereby increase the conductivity.…”

Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems

“…Despite the advantages of computing-inmemory using memristive devices for parallel computation tasks, the reliable production of devices and systems that meet the requirements of commercially available processors remains challenging. 6,7,407 To date, no memristive device has been identified as a clear winner to replace CMOS-based electronics.…”

“…Extensive research has been conducted at the material level to develop memristive technology by improving conventional nonvolatile memories and developing devices with innovative operating principles. Despite the advantages of computing-in-memory using memristive devices for parallel computation tasks, the reliable production of devices and systems that meet the requirements of commercially available processors remains challenging. ,, To date, no memristive device has been identified as a clear winner to replace CMOS-based electronics. To overcome the challenges of integrating memristive devices into commercial IC technologies, comprehensive investigations, including device optimization, algorithm-architectural studies, hardware–software codesign, and system-level design, are necessary (Figure a).…”