2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) 2021
DOI: 10.1109/bcicts50416.2021.9682485
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Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications

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Cited by 12 publications
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“…• for circuit and TCAD simulations (M. Muller et al, 2022), • for model parameter extraction ) and • for model parameter extraction and TCAD simulation (Phillips et al, 2022).…”
Section: Related Publicationsmentioning
confidence: 99%
“…• for circuit and TCAD simulations (M. Muller et al, 2022), • for model parameter extraction ) and • for model parameter extraction and TCAD simulation (Phillips et al, 2022).…”
Section: Related Publicationsmentioning
confidence: 99%