Advances in ion beam modification of semiconductors

Elliman, R. G.; Williams, James S.

doi:10.1016/j.cossms.2014.11.007

Cited by 40 publications

(21 citation statements)

References 144 publications

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“…Ion implantation is another widely used modification technique in materials science 110. In the ion implantation process, ions of one element are electrostatically accelerated and impinge on a solid target, thereby altering the physical properties and chemical composition of the target when the ions stay in the target.…”

Section: Basic Features Of Pscsmentioning

confidence: 99%

Porous Single‐Crystal‐Based Inorganic Semiconductor Photocatalysts for Energy Production and Environmental Remediation: Preparation, Modification, and Applications

Niu

Albero

Atienzar

et al. 2020

Adv Funct Materials

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Semiconductor photocatalytic and photovoltaic performance depends on crystallinity and surface area to a large extent. One strategy that has recently emergyed to improve semiconductor photoresponse efficiency is their synthesis as porous single crystals (PSCs), therefore providing simultaneously high crystallinity, minimization of grain boundaries, and large specific surface area. Other factors, such as high density of active sites, and enhanced light absorption, also contribute to increased PSC photoresponse with respect to analogous bulk or amorphous materials. This review initially presents the concept and main properties of PSCs. Then, the synthetic routes and the applications as photocatalysts and as photovoltaic devices, mainly in sunlight applications, are summarized. The synthetic procedures have been classified according to the mechanism of pore generation. Applications cover photocatalysis for environmental remediation, solar fuels production, selective photooxidation of organic compounds, and photovoltaic devices. Finally, a summary and views on future developments are provided. The purpose of this review is to show how the use of PSCs is a powerful general methodology applicable beyond metal oxides and can ultimately lead to sufficient photoresponse efficiency, bringing these processes close to commercial application.

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Section: Basic Features Of Pscsmentioning

confidence: 99%

Porous Single‐Crystal‐Based Inorganic Semiconductor Photocatalysts for Energy Production and Environmental Remediation: Preparation, Modification, and Applications

Niu

Albero

Atienzar

et al. 2020

Adv Funct Materials

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“…GaN‐based devices have been fabricated mainly by using GaN layers grown on non‐native substrates because of difficulties in obtaining large GaN substrates. However, since recent development on techniques for growing GaN layers on Si substrates has progressed significantly, the production cost of the devices is expected to be reduced dramatically …”

Section: Introductionmentioning

confidence: 99%

“…Because one of the reasons for the great success of Si‐based devices is the availability of ion implantation, the use of this technique is critical for advancing GaN device technology. However, the electrical activation of implanted dopants in GaN has been impeded by difficulties in removing implantation damages . Although n‐type dopants can be activated at annealing temperatures as low as 1200 °C, the activation of p‐type dopants (Mg and Be) is problematic and has now become a serious obstacle.…”

Section: Introductionmentioning

confidence: 99%

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Uedono

Iguchi

Narita

et al. 2019

Physica Status Solidi (b)

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Vacancy-type defects in Mg-implanted GaN with and without hydrogen (H) implantation are probed by using monoenergetic positron beams. Mg þ and H þ ions are implanted into GaN(000 1) to obtain 0.1 and 0.7-mm-deep box profiles with Mg and H concentrations of 1 Â 10 19 and 2 Â 10 20 cm À3 , respectively. For the as-implanted samples, the major defect species is determined to be Gavacancy (V Ga ) related defects such as V Ga , divacancy (V Ga V N ), and their complexes with impurities. For Mg-implanted samples, an agglomeration of vacancies starts at 800 C annealing, leading to the formation of vacancy clusters such as (V Ga V N ) 3 . For the samples annealed above 1000 C, the trapping rate of positrons by vacancies is increased by illumination of a He-Cd laser. This is attributed to the capture of photon-excited electrons by the defects and their charge transition. For Mg-and H-implanted samples, the hydrogenation of vacancy-type defects starts after 800 C annealing. Comparing with the annealing behavior of defects for the samples without H-implantation, the clustering of vacancy-type defects is suppressed, which can be attributed to the interaction between Mg, H, and vacancies.

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“…2) which, especially for n-type ultrashallow junctions, are still challenging due to the lower solid solubility and higher diffusivity of V-group elements. [3][4][5][6] Heavy doping of Ge is also crucial for interesting applications in optoelectronics, such as lasing in the mid-IR range 7 and mid-IR plasmon-enhanced sensing. 8,9 The melting laser thermal annealing (LTA) technique has been recently considered in Ge [10][11][12] as being the only technology able to activate dopants beyond their solid solubility limit.…”

mentioning

confidence: 99%

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

Milazzo

Impellizzeri

Piccinotti

et al. 2017

Applied Physics Letters

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Heavy doping of Ge is crucial for several advanced micro-and optoelectronic applications, but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a concentration of 1 Â 10 20 cm À3 by As ion implantation and melting laser thermal annealing (LTA) is shown here to be highly metastable. Upon post-LTA conventional thermal annealing As electrically deactivates already at 350 C reaching an active concentration of $4 Â 10 19 cm À3. No significant As diffusion is detected up to 450 C, where the As activation decreases further to $3 Â 10 19 cm À3. The reason for the observed detrimental deactivation was investigated by Atom Probe Tomography and in situ High Resolution X-Ray Diffraction measurements. In general, the thermal stability of heavily doped Ge layers needs to be carefully evaluated because, as shown here, deactivation might occur at very low temperatures, close to those required for low resistivity Ohmic contacting of n-type Ge.

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Advances in ion beam modification of semiconductors

Cited by 40 publications

References 144 publications

Porous Single‐Crystal‐Based Inorganic Semiconductor Photocatalysts for Energy Production and Environmental Remediation: Preparation, Modification, and Applications

Porous Single‐Crystal‐Based Inorganic Semiconductor Photocatalysts for Energy Production and Environmental Remediation: Preparation, Modification, and Applications

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

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