Advances in Mode-Locked Semiconductor Lasers

Avrutin, E.A.; Rafailov, Edik U.

doi:10.1016/b978-0-12-391066-0.00003-4

Cited by 5 publications

(5 citation statements)

References 117 publications

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“…16 and 17); indeed in Figure 16, the operating frequency corresponds to the second harmonic of the cavity round-trip even at the relatively modest current of 2.2 times threshold. Unlike the single-contact laser case, harmonics higher than second have also been observed in the simulations, which can also be the case in long cavity passively mode locked lasers [16,18].…”

Section: Resultssupporting

confidence: 54%

“…During such short time, output instabilities have no time to develop and the regime remains stable. We note also that in the more conventional semiconductor laser constructions with a saturable absorber, stable mode locking is also difficult to achieve at repetition rates comparable to, or below, the carrier lifetime in the gain section [16]. We note indeed that in simulations with laser cavity lengths 2-5 times the value reported above, we found that for the same parameters studied here, the stable long pulse structures of Figure 7b (and reminiscent to those seen in [2]) are simulated for a fairly broad range of tuning speeds; however the short pulse, self-ML type dynamics of the type of Figure 7c is not seen for any operating parameters.…”

Section: Resultsmentioning

confidence: 93%

“…One notes that the low α H is only seen in QD materials in a very narrow range of parameters, usually near threshold; in general, self-phase modulation in QD and QDh lasers, including mode locked ones, can be very significant (see e.g. [16] for an overview). An alternative route might involve using a traditional mode locking structure with a material that can be bulk, QW or QD, and including a saturable absorber (SA) incorporated in it (Fig.…”

Section: Resultsmentioning

confidence: 99%

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Dynamics of single- and multicontact external cavity semiconductor lasers under intracavity frequency sweeping: effects of material and laser parameters

Avrutin

Zhang

2019

Eur. Phys. J. B

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We present numerical analysis of the dynamic behavior of a single-and multicontact Fabry-Perot semiconductor laser frequency-swept by means of an ultrafast intracavity filter. The interrelated roles of the tuning speed, the filter bandwidth, the cavity length, and the self-phase modulation in laser dynamics are analyzed. Regular and irregular mode hopping, as well as fundamental and second harmonic sliding frequency mode locking and chaotic laser operation are identified as important dynamic regimes. The relation between the tuning dynamics asymmetry and the self-phase modulation in the laser is studied. The operation of a multicontact laser with an intracavity saturable absorber in a combined sliding-frequency and passive mode locking regime is shown; the dynamic asymmetry in the laser behavior is shown to be reduced but not eliminated by the presence of the absorber.

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Section: Resultssupporting

confidence: 54%

Section: Resultsmentioning

confidence: 93%

Section: Resultsmentioning

confidence: 99%

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Dynamics of single- and multicontact external cavity semiconductor lasers under intracavity frequency sweeping: effects of material and laser parameters

Avrutin

Zhang

2019

Eur. Phys. J. B

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“…The introduction of the asymmetrical vertical waveguide allows an increased Al-concentration and thus carrier confinement in the waveguide layers. The structure has an InGaAs/GaAsP the double quantum well (DQW) embedded in 0.8 μm thick p-type and 4.0 μm n-type 0268-1242/13/045015+05$33.00 well thickness and confinement factor, is advantageous for achieving a high peak power [11].…”

Section: Device Design and Fabricationmentioning

confidence: 99%

Integrated 13 GHz ps-pulse-source at 1064 nm

Brox¹,

Prziwarka²,

Klehr³

et al. 2013

Semicond. Sci. Technol.

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We present an integrated pulse source at 1064 nm and discuss design, fabrication and measurement results of the 3.5 mm long ridge-waveguide distributed Bragg reflector laser. The optical pulses with a peak power of 0.9 W, a temporal duration of 12.4 ps and a repetition frequency of 13 GHz are generated by passive mode-locking and are well suited for seeding master oscillator power amplifier systems for efficient green light generation with nonlinear frequency doubling in single pass configuration.

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“…Although these models are attractive and convenient given the natural modal picture that follows from our design approach [18], current frequency domain models are valid for small gain and loss. In addition, because these models describe the ML state as a steady-state rather than a steady peri-arXiv:1405.7614v1 [physics.optics] 29 May 2014 odic state, these models are small signal models of the mode-locked laser [21]. They therefore may not provide a complete and accurate picture of the various dynamical processes that can destabilize the ML state [22,23].…”

Section: Introductionmentioning

confidence: 99%

Design Optimization of Passively Mode-Locked Semiconductor Lasers With Intracavity Grating Spectral Filters

O’Callaghan

Bitauld

O’Brien

2014

IEEE J. Quantum Electron.

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We consider design optimization of passively mode-locked two-section semiconductor lasers that incorporate intracavity grating spectral filters. Our goal is to develop a method for finding the optimal wavelength location for the filter in order to maximize the region of stable mode-locking as a function of drive current and reverse bias in the absorber section. In order to account for material dispersion in the two sections of the laser, we use analytic approximations for the gain and absorption as a function of carrier density and frequency. Fits to measured gain and absorption curves then provide inputs for numerical simulations based on a large signal accurate delay-differential model of the mode-locked laser. We show how a unique set of model parameters for each value of the drive current and reverse bias voltage can be selected based on the variation of the net gain along branches of steady-state solutions of the model. We demonstrate the validity of this approach by demonstrating qualitative agreement between numerical simulations and the measured currentvoltage phase-space of a two-section Fabry-Perot laser. We then show how to adapt this method to determine an optimum location for the spectral filter in a notional device with the same material composition, based on the targeted locking range, and accounting for the modal selectivity of the filter.

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Advances in Mode-Locked Semiconductor Lasers

Cited by 5 publications

References 117 publications

Dynamics of single- and multicontact external cavity semiconductor lasers under intracavity frequency sweeping: effects of material and laser parameters

Dynamics of single- and multicontact external cavity semiconductor lasers under intracavity frequency sweeping: effects of material and laser parameters

Integrated 13 GHz ps-pulse-source at 1064 nm

Design Optimization of Passively Mode-Locked Semiconductor Lasers With Intracavity Grating Spectral Filters

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