Advances in nanowire PCM

Longo, M.

doi:10.1016/b978-0-08-102584-0.00013-9

Cited by 3 publications

(2 citation statements)

References 132 publications

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“…Among the different methods explored to overcome the above limitations, nanowire (NWs) based PCMs fabricated by the bottom-up approach have drawn considerable interest [ 10 , 11 , 12 , 13 , 14 , 15 ]. Advantages of using NWs for such an application are their small sub lithographic feature sizes and single-crystalline defect-free structure, where novel functionalities are expected to originate by engineering the constituent compositions, sizes, and structures, as in the case of axial [ 16 , 17 , 18 ], radial (core-shell) [ 19 , 20 ], and branched heterostructured NWs [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

et al. 2022

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Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb2Te3 shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemical vapor deposition (MOCVD), catalyzed by the Vapor–Liquid–Solid (VLS) mechanism. The thickness of the Sb2Te3 shell could be adjusted by controlling the growth time without altering the nanowire morphology. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) techniques were employed to examine the surface morphology and the structure of the nanowires. The study aims to investigate the interdiffusion, intactness, as well as the oxidation state of the core-shell nanowires. Angle-resolved X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface chemistry of the nanowires. No elemental interdiffusion between the GeTe, Ge-rich Ge-Sb-Te cores, and Sb2Te3 shell of the nanowires was revealed. Chemical bonding between the core and the shell was observed.

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Section: Introductionmentioning

confidence: 99%

Interface Analysis of MOCVD Grown GeTe/Sb2Te3 and Ge-Rich Ge-Sb-Te/Sb2Te3 Core-Shell Nanowires

et al. 2022

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“…Interest in chalcogenide nanowires (NWs) continues to grow due to their potential capacity to undergo low energy crystalline-amorphous (order-disorder) phase transition [1,2], for several applications such as memory, logic, and sensor devices [3][4][5][6][7][8][9]. Such phase change materials have attracted significant attention, being a promising media for non-volatile phase-change memories (PCM), in addition to optical memories such as (re)writable compact discs (CD) and digital video discs (DVD) [10][11][12]. The realization of PCM devices is, however, still limited due to the requirements of alloy composition, structure, small cell size, high scalability, and low power consumption.…”

Section: Introductionmentioning

confidence: 99%

MOCVD Growth of GeTe/Sb2Te3 Core–Shell Nanowires

et al. 2021

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We report the self-assembly of core–shell GeTe/Sb2Te3 nanowires (NWs) on Si (100), and SiO2/Si substrates by metalorganic chemical vapour deposition, coupled to the vapour–liquid–solid mechanism, catalyzed by Au nanoparticles. Scanning electron microscopy, X-ray diffraction, micro-Raman mapping, high-resolution transmission electron microscopy, and electron energy loss spectroscopy were employed to investigate the morphology, structure, and composition of the obtained core and core–shell NWs. A single crystalline GeTe core and a polycrystalline Sb2Te3 shell formed the NWs, having core and core–shell diameters in the range of 50–130 nm and an average length up to 7 µm.

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