Advances in Photodetectors and Optical Receivers

Beling, Andreas; Campbell, Joe C.

doi:10.1016/b978-0-12-396958-3.00003-2

Cited by 3 publications

(4 citation statements)

References 241 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dark current measured for the 3×10 µm 2 UTC-PD is plotted in the inset of Fig. 3(a), showing a value of 153 nA at -4 V, which is relatively high compared to state-of-the-art InP-based PDs [6]. This can be related to the remaining spiking of the NiGeAu-based n-contact on top of the membrane PD, which can lead to impurity trap levels and thereby enhance the generation-recombination current as well as the tunneling current.…”

Section: Static Measurementsmentioning

confidence: 97%

“…In this case, the value of τ c will increase to 3 ps assuming a saturation velocity of 1 × 10 7 [18]. For these two cases, the transit-time limited 3dB bandwidths ( f tr ) are 123 GHz and 85 GHz, respectively, using [6,19] …”

Section: Design and Fabricationmentioning

confidence: 99%

“…It not only allows for monolithic integration of highperformance InP-based light sources on silicon [1][2][3][4][5], but also provides photodetectors (PDs) with high efficiency and low dark current [6]. Currently, the reported bandwidths of heterogeneously integrated InP-based PDs [7,8] are lower than those of Ge-based PDs [9,10].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Shen¹,

Jiao²,

Yao³

et al. 2016

Opt. Express

View full text Add to dashboard Cite

Abstract:A uni-traveling carrier photodetector (UTC-PD), heterogeneously integrated on silicon, is demonstrated. It is fabricated in an InP-based photonic membrane bonded on a silicon wafer, using a novel double-sided processing scheme. A very high 3 dB bandwidth of beyond 67 GHz is obtained, together with a responsivity of 0.7 A/W at 1.55 µm wavelength. In addition, open eye diagrams at 54 Gb/s are observed. These results promise high speed applications using a novel full-functionality photonic platform on silicon. Tol, H. Ambrosius, G. Roelkens, and M. Smit, "Low-optical-loss, low-resistance Ag/Ge based ohmic contacts to n-type InP for membrane based waveguide devices," Opt. Mater. Express 5(2), 393-398 (2015). 24. A. Higuera-Rodriguez, V. Dolores-Calzadilla, Y. Jiao, E. J. Geluk, D. Heiss, and M. K. Smit, "Realization of efficient metal grating couplers for membrane-based integrated photonics," Opt. Lett. 40(12), 2755Lett. 40(12), -2757Lett. 40(12), (2015.

show abstract

Section: Static Measurementsmentioning

confidence: 97%

Section: Design and Fabricationmentioning

confidence: 99%

See 1 more Smart Citation

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Shen¹,

Jiao²,

Yao³

et al. 2016

Opt. Express

View full text Add to dashboard Cite

show abstract

“…The UTC-PD is the other key component of the CAO-Rx. InP/InGaAs based WG-PDs are known as a standard solution for today's telecom applications due to their high absorption efficiency, low dark current, and high carrier drift velocities [38]. Particularly, the InP/InGaAs based UTC-PD is one of the most promising structures for very high bandwidth operation [39].…”

Section: B Design and Fabrication Of Cao-rxmentioning

confidence: 99%

Ultrahigh Throughput Indoor Infrared Wireless Communication System Enabled by a Cascaded Aperture Optical Receiver Fabricated on InP Membrane

Cao

Jiao

Shen

et al. 2018

J. Lightwave Technol.

View full text Add to dashboard Cite

published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research. • You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal.If the publication is distributed under the terms of Article 25fa of the Dutch Copyright Act, indicated by the "Taverne" license above, please follow below link for the End User

show abstract

Photodiodes

2020

Photodetectors

View full text Add to dashboard Cite

Advances in Photodetectors and Optical Receivers

Cited by 3 publications

References 241 publications

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

High-bandwidth uni-traveling carrier waveguide photodetector on an InP-membrane-on-silicon platform

Ultrahigh Throughput Indoor Infrared Wireless Communication System Enabled by a Cascaded Aperture Optical Receiver Fabricated on InP Membrane

Photodiodes

Contact Info

Product

Resources

About