Advances in self‐assembled SiGe islands and nanostructures

Abstract

We review aspects in the growth and characterization of Si1–xGex islands and Ge dots on (001) Si. We discuss the mechanisms that lead to dot formation and their shape evolution with Ge coverage. We discuss recent progress in the determination of their composition and strain. We review various approaches currently being investigated to engineer Si1–xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre‐deposition on Si (001) can influence nucleation and growth of Ge islands. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)