Advances in silicon carbide X-ray detectors

Bertuccio, G.; Caccia, S.; Puglisi, Donatella; Macera, D.

doi:10.1016/j.nima.2010.08.046

Cited by 87 publications

(90 citation statements)

References 16 publications

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“…These leakage current densities are comparable with those reported for other high quality 4H-SiC Schottky devices (e.g. 1 × 10 −9 A /cm 2 at 100 °C at a mean internal electric field of 103 kV/cm [23]). Although the current density follows a clearly exponential increase as temperature increases from 40 °C to 120 °C, due to more thermally generated carriers as the temperature increases, the measurement system limits the current measurements at lower temperatures.…”

Section: Current-voltage Measurementssupporting

confidence: 88%

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

et al. 2015

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Section: Current-voltage Measurementssupporting

confidence: 88%

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

et al. 2015

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“…This leakage current density was much smaller than has been reported with GaAs detectors at 100 °C (87 nA/cm 2 ) even when they were at lower electric fields (22 kV/cm) [12]. The measured leakage current density of the Al0.52In0.48P (2 μm thickness) was comparable to the leakage current densities shown with high quality SiC (70 μm thickness) operated at 100 °C (1 nA/cm 2 at 103 kV/cm) [9].…”

Section: A Electrical Characterisationmentioning

confidence: 42%

“…The better energy resolution observed by Bertuccio et al [9] was attributed to the lower electronic noise associated with their device' readout electronics, the thicker detector (lower capacitance) and also the extremely high quality materials used. At 60 °C, a FWHM of 1.12 keV at 5.9 keV was achieved here, whilst a FWHM of 840 eV at 5.9 keV was obtained by Lioliou et al [12] for GaAs detectors.…”

Section: B X-ray Spectroscopy and Noise Analysismentioning

confidence: 96%

“…A SiC X-ray detector was demonstrated by Bertuccio et al [9] with an energy resolution (FWHM) at 5.9 keV of 233 eV at 100 °C; whilst an Al0.8Ga0.2As photodiode was reported by Barnett et al [10] with energy resolution at 5.9 keV of 2.2 keV at 90 °C, limited by the noise of the preamplifier used. GaAs structures were also developed and characterised for use as X-ray spectrometers by Barnett et al [11] and Lioliou et al [12] with energy resolutions at 5.9 keV of 1.5 keV at 80 °C, and 840 eV at 60 °C, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Temperature study of Al0.52In0.48P detector photon counting X-ray spectrometer

Butera

Gohil

Lioliou

et al. 2016

Journal of Applied Physics

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A prototype 200 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiode (2 μm i-layer) was characterised at temperatures from 100 °C to −20 °C for the development of a temperature tolerant photon counting X-ray spectrometer. At each temperature, X-ray spectra were accumulated with the AlInP detector reverse biased at 0 V, 5 V, 10 V, and 15 V and using different shaping times. The detector was illuminated by an 55Fe radioisotope X-ray source. The best energy resolution, as quantified by the full width at half maximum (FWHM) at 5.9 keV, was observed at 15 V for all the temperatures studied; at 100 °C, a FWHM of 1.57 keV was achieved, and this value improved to 770 eV FWHM at −20 °C. System noise analysis was also carried out, and the different noise contributions were computed as functions of temperature. The results are the first demonstration of AlInP's suitability for photon counting X-ray spectroscopy at temperatures other than ≈20 °C.

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“…Wide bandgap materials, such as GaAs, [1][2][3][4][5] SiC, [6][7][8] diamond, 9,10 Al 0.52 In 0.48 P, [11][12][13] and Al x Ga 1-x As, [14][15][16] are of interest for use in space science and extreme terrestrial applications where detectors are exposed to high temperatures and intense radiation. Traditional Si X-ray spectrometers often require significant shielding and cooling mechanisms in order to function within extreme environments (e.g., ) 20 C), whereas wide bandgap detectors are more robust and can possess superior energy resolution at high temperatures due to lower thermally induced leakage currents.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

Whitaker

Butera

Lioliou

et al. 2017

Journal of Applied Physics

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Two custom-made Al0.2Ga0.8As p+-i-n+ mesa X-ray photodiodes (200 μm diameter, 3 μm i layer) have been electrically characterised across the temperature range −20 °C to 60 °C. The devices were connected to a custom-made charge sensitive preamplifier to produce an AlGaAs photon-counting X-ray spectrometer. The devices' responses to illumination with soft X-rays from an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV) were investigated across the temperature range −20 °C to 20 °C. The best energy resolution (FWHM at 5.9 keV) achieved at 20 °C was 1.06 keV (with the detector at 10 V reverse bias). Improved FWHM was observed with the devices at temperatures of 0 °C (0.86 keV) and −20 °C (0.83 keV) with the photodiode reverse biased at 30 V. The average electron hole pair creation energy was experimentally measured and determined to be 4.43 eV ± 0.09 eV at 20 °C, 4.44 eV ± 0.10 eV at 0 °C, and 4.56 eV ± 0.10 eV at −20 °C.

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Advances in silicon carbide X-ray detectors

Cited by 87 publications

References 16 publications

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes

Temperature study of Al0.52In0.48P detector photon counting X-ray spectrometer

Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

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