N‐graphene quantum dots (N‐GQDs) are prepared using graphite as a carbon source and ammonia as a nitrogen source by a top‐down approach, and further combined with SnO2 to obtain SnO2/N‐GQDs composites by a hydrothermal method. SnO2/N‐GQDs composites are analyzed by morphology and structure characterization, and the composites with different N‐GQDs content are further investigated by instantaneous photocurrent response (I‐t), electrochemical impedance (EIS), linear scanning voltammetry (LSV), and Mott‐Schottky curves (MS). SnO2/N‐GQDs composites exhibit an obvious increment in photocurrent and a decrement in interface charge transfer impedance. When the addition of N‐GQDs is 1.5wt.%, the I‐t value of SnO2/N‐GQDs reaches the optimum of 3.84 × 10−5 A cm−2, which is 2.3 times as large as that of SnO2. Meantime, the carrier density of SnO2/N‐GQDs reaches 2.67 × 1021cm−3, which is 1.5 times as high as that of SnO2. The improvement is attributed to the combination of SnO2 and N‐GQDs, which promotes more charge carriers to be generated and transported under UV irradiation.