Advancing High-Volume GaN Manufacturing: Precision Simulation of Electrical and Geometrical Deviations

Abstract

Manufacturing process deviations pose significant challenges in GaN manufacturing especially when modern technologies demand extreme chip densities. More than a thousand of each of three distinct GaN-based flip-chips were manufactured in our highly controlled cleanroom. By integrating Monte Carlo and finite element methods in the simulations which relies on the theoretical models, the results were validated by comparing the voltage measurements of the three thousand manufactured chips. Remarkably, validation was successful considering the replication of voltage deviations affecting the three designs equivalently in each specific wafer. In addition, comparing the three designs, Chip A emerged as the optimal choice for low current resistivity. Looking ahead, our theoretical modeling and simulation hold promise for high-accuracy predictions in high-volume GaN-based chip manufacturing, enhancing reliability and performance.