Advantages of LDD-only implanted fluorine with submicron CMOS technologies

Mogul, H. C.; Rost, T.A.; Lin, Der-Gao

doi:10.1109/16.556148

Cited by 6 publications

(2 citation statements)

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“…The position of F-implantation within the DRAM process flow turned out to be of major importance for the retention improvement capability. For implant pre spacer (similar to [10]) no net benefit on retention tail could be observed. We attribute this to potentially introduced additional implant damage within high electric field regions.…”

Section: Resultsmentioning

confidence: 58%

“…Depending on F-dose and the way of incorporation, beneficial as well as detrimental effects on CMOS devices have been reported ( [9] and references therein). In order to benefit from the trap passivation capability without negative effects on gate oxide reliability, F implantation only into LDD region has been proposed in [10]. To use fluorine for DRAM retention tail improvement extensive experiments on 512Mbit and 1Gbit BEST DRAM [11] in 110 nm technology have been carried out in this work.…”

Section: Resultsmentioning

confidence: 98%

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Retention Tail Improvement for Gbit DRAMs through Trap Passivation confirmed by Activation Energy Analysis

Weber¹,

Birner²,

Krautschneider

2006

2006 European Solid-State Device Research Conference

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A very efficient method to reduce gate induced drain leakage (GIDL) as the dominant leakage path in the tail part of DRAM data retention time distribution is presented. Different to other reports, GIDL is addressed by trap passivation instead of lowering of electric fields. Stable passivation of traps is achieved by implantation of fluorine into S/D regions of 512Mbit and 1Gbit DRAMs in 110 nm technology. It was found that the position of the F-implant within the process flow plays a key role to enable trap reduction and retention tail improvement. Systematic implant experiments were carried out resulting in a failcount reduction of up to 40 %. Detailed activation energy analysis on individual memory cells confirms the validity of the retention tail model and the selective reduction of GIDL traps by fluorine implantation.

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Section: Resultsmentioning

confidence: 58%