Advantages of T2SL: results from production and new development at IRnova

Höglund, Linda; Asplund, Carl; Würtemberg, R. Marcks von; Gamfeldt, A.; Kataria, Himanshu; Lantz, Dan; Smuk, Sergiy; Costard, E.; Martijn, Henk

doi:10.1117/12.2227466

Cited by 9 publications

(6 citation statements)

References 13 publications

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“…Recently, IR FPAs based on Ga‐containing InAs/GaSb MWIR T2SL barrier structures have been manufactured by the group at IRnova with pixel formats of 320 × 256 and 640 × 512 on 30 and 15 μm pitch, respectively, utilizing a readout integrated circuit (ROIC). [ 226,251 ] The PDs exhibited a cut‐off wavelength of 5.1 μm and a low dark current density of 1 × 10 −6 A cm −2 with QE of 53% measured under an applied bias of 50 mV at 120 K. The temporal and spatial NETD have been measured for these fabricated FPAs with a demonstration of relatively low NETD values of 12 and 4 mK for the 320 × 256 and 25 and 10 mK for the 640 × 512 with averaged FPAs operability of 99.8% (see Figure a,b). The 320 × 256 MWIR FPAs detector showed the capability of detecting harmful gases at HOT, such as methane (see Figure a).…”

Section: Recent Advances In Ir Detection Technologiesmentioning

confidence: 94%

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Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for environmental sensing of hazardous gases, security, defense, and medical applications. Mercury cadmium telluride (MCT) materials have been the most used detector in the MWIR range. However, it is plagued by several challenges including toxicity concerns, a high rate of Auger nonradiative recombination, a large band‐to‐band (BTB) tunneling current, nonuniformity, and the need for cryogenic cooling. Theoretically, it is predicted that type‐II superlattice (T2SL) materials can emerge as an alternative with the potential to outperform the current state‐of‐the‐art MCT PDs due to suppression of Auger recombination associated with bandgap engineering and reduced BTB tunneling current caused by the larger effective mass. Based on this theoretical prediction, it is believed that T2SL have the potential to operate at high temperatures and overcome the size, weight, and power consumption limitations of MCT. Herein, a detailed review of the fundamental material properties of T2SL PDs is provided while providing a comparison of the optical and electrical performances of Ga‐free (InAs/InAsSb) and Ga‐based (InAs/GaSb) T2SL PDs. Finally, recent advances in IR detection technologies including focal plane arrays and quantum cascade infrared photodetectors are explored.

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Section: Recent Advances In Ir Detection Technologiesmentioning

confidence: 94%

Section: Recent Advances In Ir Detection Technologiesmentioning

confidence: 99%

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Alshahrani

Kesaria

Anyebe

et al. 2021

Advanced Photonics Research

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“…HgCdTe uniformity varies widely by device but tends to be less stable than T2SLS over time and multiple cooldown cycles, with typical RFPN values above 70% of NETD. This study only addressed RFPN and did not consider operability or cluster defects, improvements in which may favour III-V materials [17,21,23,61,62,[68][69][70][71][72][73][74][75].…”

Section: Recently Reported Infrared Detector Performancementioning

confidence: 99%

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

2024

Opto-Electronics Review

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Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.

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“…SLS are fabricated by intentionally introducing small mismatches between the crystal structures to introduce controlled strain, which theoretically leads to lower dark current compared to existing detector technologies. 178,179 SLS technology shows potential to allow for detector operation at higher temperatures and reduce the necessity of the stringent cooling requirements, 180 but has yet to achieve that in practice. Extrinsic photoexcitation is predominantly based on PC technology and designs often consist of SiGe heterojunctions, impurity band conduction, and solid-state photomultiplier.…”

Section: Detectormentioning

confidence: 99%

Design Considerations for Discrete Frequency Infrared Microscopy Systems

2021

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Discrete frequency infrared (DFIR) chemical imaging is transforming the practice of microspectroscopy by enabling a diversity of instrumentation and new measurement capabilities. While a variety of hardware implementations have been realized, considerations in the design of all-IR microscopes have not yet been compiled. Here we describe the evolution of IR microscopes, provide rationales for design choices, and the major considerations for each optical component that together comprise an imaging system. We analyze design choices in illustrative examples that use these components to optimize performance, under their particular constraints. We then summarize a framework to assess the factors that determine an instrumentâs performance mathematically. Finally, we summarize the design and analysis approach by enumerating performance figures of merit for spectroscopic imaging data that can be used to evaluate the capabilities of imaging systems or suitability for specific intended applications. Together, the presented concepts and examples should aid in understanding available instrument configurations, while guiding innovations in design of the next generation of IR chemical imaging spectrometers.

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Advantages of T2SL: results from production and new development at IRnova

Cited by 9 publications

References 13 publications

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors

Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays

Design Considerations for Discrete Frequency Infrared Microscopy Systems

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