Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Yang, MinHo; Teo, Kenneth B. K.; Gangloff, L.; Milne, W. I.; Hasko, D. G.; Robert, Yannick; Legagneux, Pierre

doi:10.1063/1.2186100

Cited by 87 publications

(54 citation statements)

References 17 publications

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“…CNT [34][35][36][37][38] has superior electronic properties such as: (1) Distinctly different electrical characteristics from Si: carrier transport is one-dimensional and scattering phase space on carrier is smaller (resulting in ballistic transport and the lower power consumption); (2) Full chemical bond for C atom-no dangling bond as Si which requires passivation. This means that CNT does not require SiO 2 as an insulator.…”

Section: Advantages Of Cntfetsmentioning

confidence: 99%

Advances in Conceptual Electronic Nanodevices based on 0D and 1D Nanomaterials

et al. 2013

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Nanoelectronic devices are being extensively developed in these years with a large variety of potential applications. In this article, some recent developments in nanoelectronic devices, including their principles, structures and potential applications are reviewed. As nanodevices work in nanometer dimensions, they consume much less power and function much faster than conventional microelectronic devices. Nanoelectronic devices can operate in different principles so that they can be further grouped into field emission devices, molecular devices, quantum devices, etc. Nanodevices can function as sensors, diodes, transistors, photovoltaic and light emitting devices, etc. Recent advances in both theoretical simulation and fabrication technologies expedite the development process from device design to prototype demonstration. Practical applications with a great market value from nanoelectronic devices are expected in near future.

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Section: Advantages Of Cntfetsmentioning

confidence: 99%

Advances in Conceptual Electronic Nanodevices based on 0D and 1D Nanomaterials

et al. 2013

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“…For example, SWCNT FETs with a subthreshold swing close to the room-temperature limit of 60 mV/decade, [1][2][3] transconductance as large as 30 µS, [4][5][6] and an on/off ratio of 10 7 [refs 1 and 7], have been demonstrated. By utilizing large-capacitance gate dielectrics, SWCNT FETs can be operated with a gate-source voltage of 1 V. 2,3,5,6,[8][9][10] Like silicon FETs, SWCNT transistors with individually addressable (i.e., patterned) gate electrodes can be connected into logic circuits. [11][12][13][14][15] However, realizing transistors based on individual carbon nanotubes that display large transconductance, steep subthreshold swing and large on/off ratio simultaneously (i.e., in the same device) remains a significant challenge.…”

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confidence: 99%

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

et al. 2009

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The prospect of realizing nanoscale transistors using individual semiconducting carbon nanotubes offers enormous potential, both as an alternative to silicon technology beyond conventional scaling limits and as a way to implement high-speed devices and circuits on flexible substrates. A significant challenge is the realization of low-voltage nanotube transistors with individually addressable gate electrodes that display large transconductance, steep subthreshold swing, and large on/off ratio. Their integration into circuits with large signal gain and good stability still needs to be demonstrated. Here, we demonstrate that these important goals can be achieved with the help of a bottom-gate device structure that combines patterned metal gates with a thin gate dielectric based on a molecular self-assembled monolayer. The obtained transistors operate with a gate-source voltage of 1 V and have a transconductance of 5 µS, a subthreshold swing of 68 mV/decade, and an on/off ratio of 10 7 . To verify the excellent operational and shelf life stability, we show that the device performance does not degrade during 10 000 switching cycles and during storage under ambient conditions for more than 300 days. We also demonstrate that the device structure allows the implementation of unipolar logic circuits with good switching characteristics.

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“…When an electric field is applied between the drain and the source of a CNT transistor illustrated in figure 1, a nonequilibrium mobile charge is induced in the nanotube [1], [22], [23]: …”

Section: Voltagementioning

confidence: 99%

Numerically Efficient Modeling of CNT Transistors With Ballistic and Nonballistic Effects for Circuit Simulation

Kázmierski

Zhou

Al-Hashimi

et al. 2010

IEEE Trans. Nanotechnology

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Abstract-This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density. The approximation facilitates the solution of the selfconsistent voltage equation in a carbon nanotube so that calculation of the CNT drain-source current is accelerated by at least two orders of magnitude. A salient feature of the proposed technique is its ability to incorporate both ballistic and nonballistic transport effects without a significant computational cost. The proposed models have been extensively validated against reported CNT ballistic and non-ballistic transport theories and experimental results.Index Terms-Carbon nanotube transistors, numerical modeling, non-ballistic effects, circuit simulation.

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Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

Cited by 87 publications

References 17 publications

Advances in Conceptual Electronic Nanodevices based on 0D and 1D Nanomaterials

Advances in Conceptual Electronic Nanodevices based on 0D and 1D Nanomaterials

Highly Reliable Carbon Nanotube Transistors with Patterned Gates and Molecular Gate Dielectric

Numerically Efficient Modeling of CNT Transistors With Ballistic and Nonballistic Effects for Circuit Simulation

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