Aerosol-assisted chemical vapor deposition of 2H-WS<sub>2</sub> from single-source tungsten dithiolene precursors

Germaine, Ian M.; Richey, Nathaniel E.; Huttel, Mary B.; McElwee-White, Lisa

doi:10.1039/d3tc03755j

J. Mater. Chem. C

2024

DOI: 10.1039/d3tc03755j

|View full text |Cite

Aerosol-assisted chemical vapor deposition of 2H-WS₂ from single-source tungsten dithiolene precursors

Ian M. Germaine,

Nathaniel E. Richey,

Mary B. Huttel

et al.

Abstract: The tungsten carbonyl dimethyldithiolene (dmdt) complexes W(CO)4(dmdt), W(CO)2(dmdt)2, and W(dmdt)3 were evaluated as potential single-source precursors for the chemical vapor deposition of WS2. The results of TGA-MS, DIP-MS, and pyrolysis...

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

References 65 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Grant,

Yang,

Masoumi

et al. 2024

Journal of Vacuum Science &Amp; Technology B

View full text Add to dashboard Cite

GeSn has attracted increasing attention due to its tunable bandgap from indirect to direct resulting in unique electronic and optoelectronic capabilities. Chemical vapor deposition (CVD) is well acknowledged as an advanced growth method for GeSn, demonstrating its capability with grown materials for infrared lasers and detector development. As an in situ diagnostics of the CVD process, a residual gas analyzer (RGA) could enable the detection of all gaseous species during growth, thus probing the growth dynamics and mechanism. Therefore, it is highly desirable but is lacking in the (Si)GeSn research community. This work utilized an RGA equipped with a specialized differential vacuum pumping system to analyze the mass spectra of the GeSn CVD precursors of SnCl4, GeH4, and their combination. The spectra of SnCl4 collected from gas samples at a standard base pressure of 0.3 Torr display consistent fragments with central mass-to-charge ratios (m/z) of 78, 120, 155, 225, and 260, corresponding to Sn+, SnCl2+, SnCl+, SnCl2+, SnCl3+, and SnCl4+, respectively. These profiles closely resemble those observed in the National Institute of Standards and Technology and Wiley and Matsumoto et al. The simultaneous introduction of SnCl4 and GeH4 at a combined pressure of several tens of Torr yields spectra, indicating a chemical reaction that produces GeCl4 at room temperature in the vacuum chamber and tubing. Utilizing Gaussian16 and ORCA codes, the ab initio and density functional thermochemistry computations were employed to predict potential essential reactions and validate the experimental findings.

show abstract

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Grant,

Yang,

Masoumi

et al. 2024

Journal of Vacuum Science &Amp; Technology B

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Aerosol-assisted chemical vapor deposition of 2H-WS₂ from single-source tungsten dithiolene precursors

Abstract: The tungsten carbonyl dimethyldithiolene (dmdt) complexes W(CO)4(dmdt), W(CO)2(dmdt)2, and W(dmdt)3 were evaluated as potential single-source precursors for the chemical vapor deposition of WS2. The results of TGA-MS, DIP-MS, and pyrolysis...

Cited by 1 publication

References 65 publications

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Contact Info

Product

Resources

About

Aerosol-assisted chemical vapor deposition of 2H-WS2 from single-source tungsten dithiolene precursors

Abstract: The tungsten carbonyl dimethyldithiolene (dmdt) complexes W(CO)4(dmdt), W(CO)2(dmdt)2, and W(dmdt)3 were evaluated as potential single-source precursors for the chemical vapor deposition of WS2. The results of TGA-MS, DIP-MS, and pyrolysis...

Cited by 1 publication

References 65 publications

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

In situ mass spectrometric investigation to probe GeSn growth dynamics and mechanisms in the chemical vapor deposition processes

Contact Info

Product

Resources

About

Aerosol-assisted chemical vapor deposition of 2H-WS₂ from single-source tungsten dithiolene precursors