AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment

Abdellaoui, Abdelkader; Ghaffour, M.; Ouerdane, A.; Hamaida, K.; Monteil, Y.; Berrouachedi, N.; Lounis, Zoubida; Bouslama, M.

doi:10.1016/j.apsusc.2007.12.038

Cited by 11 publications

(5 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The structure of these EELS spectra, as shown in Fig. 1 changed in comparison with the one of cleaned InP [11]. The effect of Ar + ions on InP led to appearance of peaks located at 8.6 eV and 11.6 eV, interpreted as due to surface and bulk plasmons of In metal; this is in agreement with the EELS spectrum (e) of pure In metal taken for comparison [12][13][14][15][16][17][18].…”

Section: Aes and Eels Of Inpsupporting

confidence: 74%

See 1 more Smart Citation

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Berrouachedi

Bouslama

Abdellaoui

et al. 2009

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

Section: Aes and Eels Of Inpsupporting

confidence: 74%

“…After an ionic bombardment during a 10 min and a moderate heating in UHV at 250 8C, the Auger signals C-KLL and O-KLL vanished completely. Furthermore, the recorded EELS spectra revealed the main energy loss peak located at 15.4 eV, due to bulk plasmons of clean InP as described in our results [11].…”

Section: Aes and Eels Of Inpmentioning

confidence: 61%

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Berrouachedi

Bouslama

Abdellaoui

et al. 2009

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

“…The theoretical calculation based on the approximations gradient generalized approximation (GGA) and modified Beck Johnson (mBJ) have proved their performance to predict the physical properties of materials . In this study, we associate the experimental results related to characterization methods auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), UV photoelectron spectroscopy (UPS), and photoluminescence (PL) to theoretical results obtained by GGA and mBJ. − …”

Section: Introductionmentioning

confidence: 99%

Auger Electron Spectroscopy, Electron Energy Loss Spectroscopy, UV Photoelectron Spectroscopy, and Photoluminescence Characterization of In₂O₃ Associated to the Theoretical Calculations Based on the Generalized Gradient Approximation and Modified Becke Johnson

et al. 2017

View full text Add to dashboard Cite

The indium oxide In2O3 is among the transparent conducting oxides (TCO) appropriate for solar cells and optoelectronics. The physical properties are based on the electron distribution on the core levels and in the valence band of material. The knowledge of the electron distribution on the different states is fundamental to predict the possibilities of electron transitions. In this respect, we adopt calculations based on the generalized gradient approximation (GGA) and modified Becke Johnson (mBJ) to show the electron state density. We associate to the numerical simulation the experimental analysis techniques auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS), and UV photoelectron spectroscopy (UPS) of great sensitivity to characterize the material surfaces. The analysis technique AES is used for proving the chemical composition of the In2O3 compound through the In-M45N45N45 and O-KLL signals. The energy loss peak at 16.3 eV on the EELS spectra is related to plasmons. The energy losses lower than 16.3 eV are related to interband transitions (ITs). They arise from the hybridation of states (s, p, and d) of indium and (s, p) of oxygen. The energy loss at 19 eV is mainly related to IT transition from the d states of indium in hybridation with a slight contribution of p and s states of indium and oxygen. The calculation is useful to predict the states from which the interband transitions occur. The EELS associated with UPS constitutes powerful techniques to show the energy states of the electron distribution. The irradiation of In2O3 by the UV photons at 320 nm leads to the photoluminescence emission at low energy around 580 nm, appropriate to laser applications.

show abstract

“…The most of these applications, metal-InP Schottky structures of good quality is required [1][2][3][4]. The nature and quality of surface preparation in semiconductor technology is of the utmost importance during device fabrication and has a pronounced influence on the performance of these devices [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He<sup>+</sup> and H<sup>+</sup> Ions Bombardment

Ghaffour¹,

Abdellaoui²,

Ouerdane³

et al. 2011

MSA

View full text Add to dashboard Cite

show abstract

AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment

Cited by 11 publications

References 18 publications

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Auger Electron Spectroscopy, Electron Energy Loss Spectroscopy, UV Photoelectron Spectroscopy, and Photoluminescence Characterization of In₂O₃ Associated to the Theoretical Calculations Based on the Generalized Gradient Approximation and Modified Becke Johnson

Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He<sup>+</sup> and H<sup>+</sup> Ions Bombardment

Contact Info

Product

Resources

About

AES, EELS and TRIM investigation of InSb and InP compounds subjected to Ar+ ions bombardment

Cited by 11 publications

References 18 publications

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Investigation by EELS and TRIM simulation method of the interaction of Ar+ and N+ ions with the InP compound

Auger Electron Spectroscopy, Electron Energy Loss Spectroscopy, UV Photoelectron Spectroscopy, and Photoluminescence Characterization of In2O3 Associated to the Theoretical Calculations Based on the Generalized Gradient Approximation and Modified Becke Johnson

Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He&lt;sup&gt;+&lt;/sup&gt; and H&lt;sup&gt;+&lt;/sup&gt; Ions Bombardment

Contact Info

Product

Resources

About

Auger Electron Spectroscopy, Electron Energy Loss Spectroscopy, UV Photoelectron Spectroscopy, and Photoluminescence Characterization of In₂O₃ Associated to the Theoretical Calculations Based on the Generalized Gradient Approximation and Modified Becke Johnson

Investigation by AES, EELS and TRIM Simulation Method of InP(100) Subjected to He<sup>+</sup> and H<sup>+</sup> Ions Bombardment