2014
DOI: 10.1021/am504734d
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Affinity of the Interface between Hydroxyapatite (0001) and Titanium (0001) Surfaces: A First-Principles Investigation

Abstract: A basic understanding of the affinity between the hydroxyapatite (HA) and α-Ti surfaces is obtained through electronic structure calculations by first-principles method. The surface energies of HA(0001), HA (011̅0), HA (101̅1), and Ti(0001) surfaces have been calculated. The HA(0001) presents the most thermodynamically stable of HA. The HA/Ti interfaces were constructed by two kinds of interface models, the single interface (denoted as SI) and the double-interface (denoted as DI). Two methods, the full relaxat… Show more

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Cited by 17 publications
(26 citation statements)
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“…It should be noted that the precise stacking position also has an influence on the resulting work of adhesion values. Previously, rather similar values of the work of adhesion, in the ranges of −0.01 and −1.99 J m –2 , were obtained for the HA(0001)/Ti(0001) interface system using DFT by Sun et al…”
Section: Resultssupporting
confidence: 68%
“…It should be noted that the precise stacking position also has an influence on the resulting work of adhesion values. Previously, rather similar values of the work of adhesion, in the ranges of −0.01 and −1.99 J m –2 , were obtained for the HA(0001)/Ti(0001) interface system using DFT by Sun et al…”
Section: Resultssupporting
confidence: 68%
“…To investigate their interfacial bonding strength as well as interface stability, the interfacial distance ( d 0 ) and the work of adhesion ( W ad ) are employed. The work of adhesion ( W ad ) is defined as the following where E slab Al and E slab TiB 2 are the total energies of two six-layer Al(111) surface slabs and a nine-layer TiB 2 (0001) surface slab with the same lattice parameters of their relaxed interface models, respectively; E interface is the energy of the interface model after fully relaxed; 2 A represents the total area of two interface regions in each interface model (i.e., two identical interfaces at the top and bottom of the model).…”
Section: Results and Discussionmentioning
confidence: 99%
“…Interactions at the interface lead to charge redistribution due to electronic hybridization between the orbitals of the coating and the substrate. Therefore, for gaining a better insight in the inuence of Si doping in the a-HAP structure with and without dispersion DFT on the electronic interactions at the studied interfaces, the CDD was evaluated as follows: 41 Dr(r) ¼ r a-HAP/a-TiO 2 (r) À r a-HAP (r) À r a-TiO 2 (r),…”
Section: Resultsmentioning
confidence: 99%