Afterglow effect in photoluminescence of Si:Er

Forcales, M.; Gregorkiewicz, T.; Bradley, I. V.; Wells, J.‐P. R.

doi:10.1103/physrevb.65.195208

Cited by 28 publications

(23 citation statements)

References 19 publications

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“…27,28 These trap levels are responsible for efficient excitation of Er 3+ ions into the first excited state, while the reverse process takes the Er 3+ ions back to the ground state. Thermally induced ionization of these trap levels is responsible for the observed temperature quenching.…”

Section: Resultsmentioning

confidence: 99%

Dynamics and microscopic origin of fast 1.5μm emission in Er-doped SiO2sensitized with Si nanocrystals

2011

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We investigate the origin of fast 1.5 μm photoluminescence from Er-doped SiO 2 sensitized with silicon nanocrystals, which appears and decays within the first microsecond after a short laser excitation pulse. Timeresolved and temperature-dependent measurements on the 1.5 μm emission from Er-doped and Er-free samples reveal that the major part of this emission is Er related. A possible contribution from other photoluminescence bands, specifically of the defect-related band centered around 1.3 μm, has also been considered. All the results obtained indicate the dominant contribution of Er 3+ ions to the fast 1.5 μm emission in the investigated materials. We propose two possible mechanisms behind the fast excitation and quenching of Er 3+ 1.5 μm emission, which are both facilitated by Er-related trap centers with ionization energy of E A ≈ 60 meV.

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Section: Resultsmentioning

confidence: 99%

Dynamics and microscopic origin of fast 1.5μm emission in Er-doped SiO2sensitized with Si nanocrystals

2011

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“…To this end, a tunable mid-IR free electron laser (FEL) 2 [39], [74]- [75] was used to activate the antisymmetric vibration mode of O in Si ( 3 mode) at 8.80 m (141 meV), and its effect was monitored on the Er-1 emission, as induced by the Nd:YAG laser used as a band-to-band pumping source. The results of this two-color experiment (depicted in Fig.…”

Section: ) Effect Of 88 M Oxygen Local Vibrationmentioning

confidence: 99%

Photonic Properties of Er-Doped Crystalline Silicon

Vinh

Gregorkiewicz

2009

Proc. IEEE

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| During the last four decades, a remarkable research effort has been made to understand the physical properties of Si:Er material, as it is considered to be a promising approach towards improving the optical properties of crystalline Si. In this paper, we present a summary of the most important results of that research. In the second part, we give a more detailed description of the properties of Si/Si:Er multinanolayer structures, which in many aspects represent the most advanced form of Er-doped crystalline Si with prospects for applications in Si photonics.

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“…Particularly interesting is Erdoped crystalline Si ͑c-Si:Er͒, 4 where the radiative transition from the first excited state ͑ 4 I 13/2 ͒ to the ground state ͑ 4 I 15/2 ͒ of Er 3+ ions is coincident with the absorption minimum of silica fibers ͑c-band; 1520-1570 nm͒, currently used in telecommunication networks. In spite of large research efforts, [5][6][7][8] efficient amplifiers and lasers based on c-Si:Er have not yet been reported. The major problems are related to ͑i͒ the low solubility of Er in c-Si, ͑ii͒ thermal quenching, and ͑iii͒ inhomogeneous broadening of emission spectra due to multiplicity of Er-related optical centers formed in the Si host.…”

Section: Introductionmentioning

confidence: 99%

Optical gain of the1.54 μmemission in MBE-grown Si:Er nanolayers

Dohnalová

Gregorkiewicz

et al. 2010

Phys. Rev. B

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We present investigations of the optical gain cross section of 1.54 m Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow ͑full width at half maximum below 8 eV͒ emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission. The experiments were carried out using a combination of the variable stripe length and shifting excitation spot techniques under pulsed and continuous-wave excitations. The comparison of results for both excitation regimes enables to estimate an optical gain within the strong optical losses due to the free carrier absorption. Based on these measurements, the upper limit of the optical gain cross section of 10 −17 cm 2 and the gain coefficient of 8.8 cm −1 are deduced.

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Afterglow effect in photoluminescence of Si:Er

Cited by 28 publications

References 19 publications

Dynamics and microscopic origin of fast 1.5μm emission in Er-doped SiO2sensitized with Si nanocrystals

Dynamics and microscopic origin of fast 1.5μm emission in Er-doped SiO2sensitized with Si nanocrystals

Photonic Properties of Er-Doped Crystalline Silicon

Optical gain of the1.54 μmemission in MBE-grown Si:Er nanolayers

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