2011
DOI: 10.1016/j.jnucmat.2010.10.088
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Ag diffusion in cubic silicon carbide

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Cited by 99 publications
(127 citation statements)
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“…49 Therefore, the migration barrier of 3.2eV for V Si 1-reported by M.Bockstedte et al 15 was adopted. 2 A lower value of about 0.8 eV 43,50 has been reported for the migration barrier of Si I . However, based on the dependence of interstitial loop denuded zone (DZ) width on temperature along grain boundaries in 3C-SiC, 46 the activation energy for migration of Si interstitials has been determined to be about 1.5eV.…”
Section: Okmc Simulation For Long-term Defect Evolutionmentioning
confidence: 94%
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“…49 Therefore, the migration barrier of 3.2eV for V Si 1-reported by M.Bockstedte et al 15 was adopted. 2 A lower value of about 0.8 eV 43,50 has been reported for the migration barrier of Si I . However, based on the dependence of interstitial loop denuded zone (DZ) width on temperature along grain boundaries in 3C-SiC, 46 the activation energy for migration of Si interstitials has been determined to be about 1.5eV.…”
Section: Okmc Simulation For Long-term Defect Evolutionmentioning
confidence: 94%
“…Most of these parameters come from a recent ab-initio calculation by D. Shraders et al, 43 while a few parameters are adopted from other works 44,46 for the following reasons: 1…”
Section: Okmc Simulation For Long-term Defect Evolutionmentioning
confidence: 99%
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“…Even from the early studies (e.g. [254], and especially from the newer silver implantation studies in single crystal SiC at elevated temperatures where the SiC remains crystalline [100 -105, 270, 283] and ab initio simulation studies [277,278,282] it is clear that the volume diffusion coefficient of silver in SiC is too low to account for the silver release data. In one of the early studies [254] it was proposed that the release was associated with the migration of silver through grain boundaries of the coated polycrystalline SiC enhanced by traces of free silicon.…”
Section: Silver Diffusionmentioning
confidence: 99%
“…Grain boundary diffusion has been suggested and discussed as a possible transport mechanism in neutron irradiated TRISO coated particles as early as 1975 by Nabielek et al, [5]. More recent out-of-pile experimental on SiC and computational work also indicated that Ag transports via grain boundary diffusion under their specific experimental conditions [6][7][8][9][10]. Experimental evidence by Lopez-Honorato, et al, [8] using scanning electron microscopy; indicated that silver accumulated at grain boundaries in unirradiated SiC layers of a simulated TRISO coated particle experiment.…”
Section: Introductionmentioning
confidence: 99%