Ag-(In-Bi) Solid–Liquid Interdiffusion Bonding

Kuziora, Stephane Leonard; Nguyen, Hoang-Vu; Aasmundtveit, Knut E.

doi:10.1007/s11664-022-10063-5

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…Ag-In-Bi SLID bonding has also been investigated in recent work, showing quite comparable results to the Au-In-Bi SLID bonding (10,11). It is because Au, Ag are not miscible with Bi, and the Ag-In system has several high-temperature stable IMCs, similar with the Au-In system.…”

Section: In-bi Bondingmentioning

confidence: 77%

“…The main difference to the Au-In system is that the most In-rich Ag-In IMC (AgIn 2 ) has a moderate temperature stability, melting at 166 °C. Ag-In-Bi has recently been demonstrated for solid-state bonding at temperatures as low as 65 °C, when allowing for long bonding times (~days) (12). Solid bonds are obtained and the bond line consists of Ag / AgIn 2 / Bi-In IMCs / AgIn 2 / Ag.…”

Section: In-bi Bondingmentioning

confidence: 99%

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Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration

Wernicke,

Rebhan,

Vuorinen

et al. 2023

ECS Trans.

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An overview of various low temperature (<200°C) wafer bonding processes using metal interlayers is presented. Such processes are very attractive for novel applications in 3D heterogenous packaging as the allow for simultaneous formation of electrical interconnects, as well as hermetic encapsulation of various sensors and microelectromechanical systems-based devices. Metal wafer bonding is a generic category of processes consisting of various sub-categories, each one defined by the different principles governing the process. One can differentiate between eutectic wafer bonding (a eutectic alloy is formed as bonding layer during the process by liquid-solid interdiffusion), intermetallic wafer bonding (an intermetallic alloy is formed as bonding layer during the process by solid-liquid interdiffusion, process known also as Solid Liquid Intermetallic Diffusion – SLID or Transient Liquid Phase – TLP), and metal thermo-compression (TC) wafer bonding. Different critical/gating parameters were investigated and their impact for generally reducing processing temperatures for the different metal bonding systems was studied.

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Section: In-bi Bondingmentioning

confidence: 77%

Section: In-bi Bondingmentioning

confidence: 99%

Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration

Wernicke,

Rebhan,

Vuorinen

et al. 2023

ECS Trans.

View full text Add to dashboard Cite

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Ag–(In–Bi) solid-state bonding

Kuziora

Nguyen

Aasmundtveit

2023

J Mater Sci: Mater Electron

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Solid-state diffusion bonding is a metallurgical technique to bond interfaces. We identify Ag–(In–Bi) as a material system that can be bonded at 65 °C. This work aims to demonstrate low-temperature bonding and to determine if Bi precipitates form through a solid-state diffusion mechanism. Bonds were formed at 65 °C utilizing a 78.5-at% In–Bi eutectic foil and a 95-at% In–Bi foil, with bonding times 1, 2, 4, and 8 days. These foils were sandwiched between two pieces of Ag, forming an Ag/In–Bi foil/Ag bonding stack. Thanks to bridging of AgIn2, a temperature stability of ~166 °C is possible. Using a bonding material with higher In content (in our case 95 at% In) than the eutectic did not reduce the growth rate of AgIn2. The BiIn2 left over from the reaction was surrounded by the growth of AgIn2. The solid-state bonding results presented in this paper indicate that dissolution is a necessary condition for the unique Bi precipitates previously seen in the Ag–(In–Bi) solid–liquid system.

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