Ag-induced structural transformations on Si(111): quantitative investigation of the Si mass transport

Si(111)−α−3×3−Auphase modified by In adsorption: Stabilization of a homoge

“…No Si redistribution has been detected during transition from ␣-ͱ 3 ϫ ͱ 3-Au to ͱ 3 ϫ ͱ 3-͑Au, In͒, which means that both surfaces has the same top Si atoms density. Our experimental determination based on the measurements of the area occupied by the islands in the two-level island-on-terrace system 6 yields the value of about 0.9 ML of Si for both surfaces. This is in agreement with the results of the earlier STM study, 20 in which the top Si atom density in the ␣-ͱ 3 ϫ ͱ 3-Au phase has been found to be about 1 ML from the hole-island analysis.…”

“…Atomically clean Si͑111͒7 ϫ 7 surfaces were prepared in situ by flashing to 1280°C after the samples were first outgassed at 600°C for several hours. 6 Gold was deposited from a heated Au-covered W wire at a rate of about 0.5 ML/ min. Indium was deposited from a Ta foil tube at a rate of 0.01 ML/ min.…”

Surfactant role of Ag atoms in the growth of Si layers on Si(111)√3×√3-Ag substrates

“…0.31 nm) deep "hole" and high "island" regions. [20][21][22] The ͱ3 Â ͱ3 reconstruction was observed across virtually the entire substrate, as can be seen in the magnified (8 Â 8 nm 2 ) STM image in Fig. 2(b).…”

Low temperature formation of Si(111)-(2n+1) × (2n+1) surface reconstructions

“…The formation of the Ag/Si(1 1 1)-( p 3 Â p 3) phase is known to involve a substantial redistribution within the top Si(1 1 1) substrate layer (i.e. surface Si mass transport) [25]. Si transport as evidenced by a Ag-Si interaction [26][27][28] can be attributed to the enhancement of the surface migration of Si atoms under Ag irradiation at elevated temperature.…”