As organic photodetectors with less than 1 μm pixel size are in demand, a new way of enhancing the sensitivity of the photodetectors is required to compensate for its degradation due to the reduction in pixel size. Here, we used Ag nanoparticles coated with SiO x n y as a light-absorbing layer to realize the scale-down of the pixel size without the loss of sensitivity. The surface plasmon resonance appeared at the interface between Ag nanoparticles and SiO x n y. the plasmon resonance endowed the organic photodetector with boosted photon absorption and external quantum efficiency. As the Ag nanoparticles with Sio x n y are easily deposited on ito/Sio 2 , it can be adapted into various organic color image sensors. The plasmon-supported organic photodetector is a promising solution for realizing color image sensors with high resolution below 1 μm. Capturing color images has been a basic human desire since time immemorial. Painting portraits and/or sceneries was the only way of capturing the reflected images of people or things colorfully before Becquerel's photographic discovery with silver halide in 1848 1. The introduction of charge-coupled device (CCD)-based image sensors in markets has rapidly replaced film-based photography, and now color image sensors (CISs) are being widely used in imaging electronics such as digital cameras, smart phones, portable computers, and vehicles 2. Research focus on the resolution of the CIS has increased greatly, and much effort has been made to scale down the size of imaging pixels on a chip with Si technology. As a front leader in CISs, Si-based complementary metaloxide-semiconductor (CMOS) image sensors 3-5 , which are made up of Bayer-patterned color filter arrays 6 , have made impressive progress in enhancing the image sensor performance, and have experienced commercial success even after the introduction of stacked structures. However, they are faced with a great challenge to realize high resolutions without any loss of sensitivity as the pixel size has scale-downed below 1 μm. Although the integration of CMOS with plasmonic color filters boosted sensitivity owing to increased transmission and the adoption of nanowires for filter arrays further improved the sensitivity 7-9 , they are not fundamental solutions to the problems caused by the low photon absorption coefficient of Si and the limited light-receiving area of pixels. Thus, researchers have been searching for an alternative to Si-based CMOS. Meanwhile, the advent of organic photodiodes has expanded the CIS domain further to flexible and color filter-free image capturing electronics 10-12. As a hybrid-type, organic-on-Si-CMOS image sensors with a stacked structure 13-15 , where the top photo-conversion layer serves as a photodiode for green light and the bottom layer works as photodiode for blue and red lights, have doubled the light-receiving area owing to the stacked layers where light is absorbed.