Ag on Si(111) from basic science to application

Belianinov, Aleksey

doi:10.2172/1048520

Cited by 1 publication

(2 citation statements)

References 24 publications

(33 reference statements)

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“…Among all metal-passivated Si surfaces, Si(111)-√3×√3-Ag is one of the most studied prototypical metal−semiconductor interfaces. 9 It is formed by deposition of one monolayer of Ag atoms on the Si(111) surface followed by annealing at an elevated temperature. The parabolic surface band structure of Si(111)-√3×√3-Ag near the Fermi level resembles that of a typical metal surface.…”

Section: Introductionmentioning

confidence: 99%

“…Passivation of Si surfaces with metal atoms offers a promising approach for altering the surface diffusion properties of the adsorbed molecules and hence promoting the formation of the equilibrium state of self-assembled molecular structures. Among all metal-passivated Si surfaces, Si(111)-√3×√3-Ag is one of the most studied prototypical metal–semiconductor interfaces . It is formed by deposition of one monolayer of Ag atoms on the Si(111) surface followed by annealing at an elevated temperature.…”

Section: Introductionmentioning

confidence: 99%

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Aligned Organic Molecular Wires in Methionine Nanofilm Growth on Si(111)-√3×√3-Ag

et al. 2021

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Interfacial interactions of biomolecular materials with semiconductor surfaces have been of immense interest because of their technological applications in biosensors and biomolecular nanoelectronics. The fabrication of highly ordered, extended low-dimensional molecular patterns on Si surfaces promises to be an important breakthrough in the field of Si-based biomolecular nanodevices. Even though these remarkable biomolecular self-assemblies have been more often observed on metal surfaces, there are fewer relevant studies on Si surfaces because of the high reactivity of their dangling bonds. On the other hand, the presence and indeed the saturation of these dangling bonds provide a unique approach to engineer robust supramolecular architectures on these surfaces. In the present work, methionine nanofilm growth on a benchmark metal silicide surface, Si(111)-√3×√3-Ag, at room and lower temperature has been investigated by X-ray photoelectron spectroscopy and scanning tunneling microscopy. Our results show the formation of extended one-dimensional molecular wires consisting of methionine dimer rows with zwitterionic intermolecular interactions similar to those observed on single-crystal metal surfaces. Notable surface defects such as step edges and antiphase boundaries are found to play a crucial role in the initiation and directed growth of the adsorption structures, while terrace sites appear to be more conducive to the development of aligned one-dimensional (nanowires, nanoboomerangs) and two-dimensional (nanogratings, and concentric nanotriangles) self-organized nanostructures. Our complementary density functional theory calculations further provide plausible adsorption configurations of individual molecular adspecies and self-organized oriented molecular wires on the terraces of the surface. We further illustrate the importance of molecule–molecule and molecule–substrate interactions that give rise to key differences between methionine adsorption arrangements on bare Si and the silver silicide surfaces.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%