Ag0.225Ge0.260S0.515-AgBr glasses

Moroz, Mykola; Прохоренко, М. В.; Мороз, В. М.

doi:10.1134/s0020168514050124

Cited by 4 publications

(5 citation statements)

References 9 publications

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“…However, the use of bismuth chalcohalide (nano)materials is still limited and their chemistry remains largely unexplored. Traditional synthetic methods yield good quality single crystals via time‐ and energy‐intensive processes, mostly relying on a slow (up to several days) crystallization upon cooling of a melt from high starting temperatures (up to above 500 °C) [17, 20, 21] . Moreover, the need for a post‐growth processing of single crystals limits their use in device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Colloidal Bismuth Chalcohalide Nanocrystals

et al. 2022

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Here we present a colloidal approach to synthesize bismuth chalcohalide nanocrystals (BiEX NCs, in which E=S, Se and X=Cl, Br, I). Our method yields orthorhombic elongated BiEX NCs, with BiSCl crystallizing in a previously unknown polymorph. The BiEX NCs display a composition‐dependent band gap spanning the visible spectral range and absorption coefficients exceeding 105 cm−1. The BiEX NCs show chemical stability at standard laboratory conditions and form colloidal inks in different solvents. These features enable the solution processing of the NCs into robust solid films yielding stable photoelectrochemical current densities under solar‐simulated irradiation. Overall, our versatile synthetic protocol may prove valuable in accessing colloidal metal chalcohalide nanomaterials at large and contributes to establish metal chalcohalides as a promising complement to metal chalcogenides and halides for applied nanotechnology.

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Section: Introductionmentioning

confidence: 99%

Colloidal Bismuth Chalcohalide Nanocrystals

et al. 2022

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“…Modeling efforts started in the late 1990s and includes computational techniques such as molecular dynamics, kinetic Monte Carlo simulations, density functional theory, and feature scale simulators. 5,36,95,99,[102][103][104] Experimentally, a variety of self-limiting mechanisms have been investigated as described throughout this section. Illustrations of different modification mechanisms are shown in Fig.…”

Section: Materials Studied By Ale a Overviewmentioning

confidence: 99%

Overview of atomic layer etching in the semiconductor industry

Kanarik¹,

Lill²,

Hudson³

et al. 2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

484

372

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Atomic layer etching (ALE) is a technique for removing thin layers of material using sequential reaction steps that are self-limiting. ALE has been studied in the laboratory for more than 25 years. Today, it is being driven by the semiconductor industry as an alternative to continuous etching and is viewed as an essential counterpart to atomic layer deposition. As we enter the era of atomic-scale dimensions, there is need to unify the ALE field through increased effectiveness of collaboration between academia and industry, and to help enable the transition from lab to fab. With this in mind, this article provides defining criteria for ALE, along with clarification of some of the terminology and assumptions of this field. To increase understanding of the process, the mechanistic understanding is described for the silicon ALE case study, including the advantages of plasma-assisted processing. A historical overview spanning more than 25 years is provided for silicon, as well as ALE studies on oxides, III–V compounds, and other materials. Together, these processes encompass a variety of implementations, all following the same ALE principles. While the focus is on directional etching, isotropic ALE is also included. As part of this review, the authors also address the role of power pulsing as a predecessor to ALE and examine the outlook of ALE in the manufacturing of advanced semiconductor devices.

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“…To the best of our knowledge, this is the lowest detection limit for Ag + in the ChG/ChH glass ISEs presented to date 23,40,41 . By combining with above EIS and Raman spectra, we attribute an improvement of electrode performance induced by AgCl addition to the increased conductivity and an enhanced ion migration due to a more open structure.…”

Section: Resultsmentioning

confidence: 78%

“…It is known that halogen atoms in ChG glasses often act as a glass network terminal, and interrupt the glass network, resulting in the more open structure. Therefore, the largely improved transport property of monovalent ions is expected with addition of halides into ChG glasses 23,24 . In this paper, we try to explore the effect of AgCl addition on conductivity and ion transport performance of Ag 2 S-As 2 S 3 glass, thereby obtaining an electrode that can be used for Ag + ion trace detection.…”

Section: Introductionmentioning

confidence: 99%

A chalcohalide glass/alloy based Ag+ ion - selective electrode with nanomolar detection limit

Yin

Wang

et al. 2017

Sci Rep

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In this paper, a silver ion-selective electrode material with lower detection limit is presented. The electrode is based on 22.5As2S3-22.5Ag2S-55AgCl chalcohalide glass membranes. The low detection limit decreases from the micromolar range of the original Ag2S-As2S3 electrode to the nanomolar level (1.89 nM) by introducing AgCl. The addition of AgCl increases the conductivity of the glasses and improves the analytical properties of electrodes because of the joint effects of Ag+ and Cl- on network structure of the glass. The super-Nernstian response behavior was observed for the partially crystallized electrode. The electrode containing AgCl also possesses a high selectivity (except for Hg2+), fast response and good stability.

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Ag0.225Ge0.260S0.515-AgBr glasses

Cited by 4 publications

References 9 publications

Colloidal Bismuth Chalcohalide Nanocrystals

Colloidal Bismuth Chalcohalide Nanocrystals

Overview of atomic layer etching in the semiconductor industry

A chalcohalide glass/alloy based Ag+ ion - selective electrode with nanomolar detection limit

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